公开(公告)号：US20210040345A1

公开(公告)日：2021-02-11

申请号：US17082259

申请日：2020-10-28

Applicant: Toshiba Memory Corporation

Inventor： Norikatsu SASAO ,  Koji Asakawa ,  Tomoaki Sawabe ,  Shinobu Sugimura

IPC: C09D153/00 ,  C08F20/28 ,  C09D125/06 ,  G03F7/00 ,  C09D133/14 ,  C08F12/08

Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.

公开(公告)号：US20200294795A1

公开(公告)日：2020-09-17

申请号：US16562709

申请日：2019-09-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  C08F220/44

Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.

公开(公告)号：US20200291155A1

公开(公告)日：2020-09-17

申请号：US16562744

申请日：2019-09-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA

IPC: C08F220/14 ,  C08F220/16 ,  C08F218/04 ,  G03F7/038 ,  G03F7/039 ,  C09D133/08 ,  C09D133/10 ,  C09D131/02 ,  G03F7/00 ,  B29C43/02 ,  C23C16/455 ,  C23C16/20 ,  H01L21/027 ,  H01L21/311 ,  H01L21/285 ,  H01L21/3213

Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

公开(公告)号：US20200291156A1

公开(公告)日：2020-09-17

申请号：US16562786

申请日：2019-09-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koji ASAKAWA ,  Norikatsu SASAO ,  Shinobu SUGIMURA

IPC: C08F220/14 ,  C08L33/10 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/311

Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.

公开(公告)号：US20190086805A1

公开(公告)日：2019-03-21

申请号：US15919443

申请日：2018-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koji ASAKAWA ,  Naoko KIHARA ,  Seekei LEE ,  Norikatsu SASAO ,  Tomoaki SAWABE ,  Shinobu SUGIMURA

IPC: G03F7/038 ,  G03F7/26

Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

公开(公告)号：US20190084829A1

公开(公告)日：2019-03-21

申请号：US15917053

申请日：2018-03-09

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Norikatsu SASAO ,  Koji Asakawa ,  Seekei Lee ,  Naoko Kihara ,  Tomoaki Sawabe ,  Shinobu Sugimura

IPC: B81C1/00 ,  B32B27/30

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.