公开(公告)号：US20210013229A1

公开(公告)日：2021-01-14

申请号：US17028748

申请日：2020-09-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Haruka SAKUMA ,  Hidenori MIYAGAWA ,  Shosuke FUJI ,  Kiwamu SAKUMA ,  Fumitaka ARAI ,  Kunifumi SUZUKI

IPC: H01L27/11597 ,  H01L27/1159 ,  H01L29/51 ,  H01L21/28

Abstract: A semiconductor memory device comprises: a substrate; a first semiconductor portion provided separated from the substrate in a first direction intersecting a surface of the substrate, the first semiconductor portion extending in a second direction intersecting the first direction; a first gate electrode extending in the first direction; a first insulating portion which is provided between the first semiconductor portion and the first gate electrode, includes hafnium (Hf) and oxygen (O), and includes an orthorhombic crystal as a crystal structure; a first conductive portion provided between the first semiconductor portion and the first insulating portion; and a second insulating portion provided between the first semiconductor portion and the first conductive portion. An area of a facing surface of the first conductive portion facing the first semiconductor portion is larger than an area of a facing surface of the first conductive portion facing the first gate electrode.