公开(公告)号：US20200273883A1

公开(公告)日：2020-08-27

申请号：US16871375

申请日：2020-05-11

Applicant: Toshiba Memory Corporation

Inventor： Hiroyasu TANAKA ,  Tomoaki SHINO

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/11526

Abstract: A semiconductor memory device includes a memory plane including a plurality of electrode layers stacked on a substrate and a semiconductor layer extending through the plurality of electrode layers in a stacking direction thereof, a circuit provided on the substrate around the memory plane, a first insulating layer covering the circuit, and a second insulating layer including a first portion and a second portion between the substrate and the first insulating layer. The first portion is provided along an outer edge of the memory plane, and the second portion is spaced from the first portion and is provided on the circuit side. The first insulating layer includes a part in contact with the substrate between the first portion and the second portion, and the first insulating layer blocks a diffusion of hydrogen radicals with a higher rate than the second insulating layer.

公开(公告)号：US20180083029A1

公开(公告)日：2018-03-22

申请号：US15462424

申请日：2017-03-17

Applicant: Toshiba Memory Corporation

Inventor： Hiroyasu TANAKA ,  Tomoaki SHINO

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/11526

CPC classification number: H01L27/11582 ,  H01L27/11526 ,  H01L27/11573

Abstract: A semiconductor memory device includes a memory plane including a plurality of electrode layers stacked on a substrate and a semiconductor layer extending through the plurality of electrode layers in a stacking direction thereof, a circuit provided on the substrate around the memory plane, a first insulating layer covering the circuit, and a second insulating layer including a first portion and a second portion between the substrate and the first insulating layer. The first portion is provided along an outer edge of the memory plane, and the second portion is spaced from the first portion and is provided on the circuit side. The first insulating layer includes a part in contact with the substrate between the first portion and the second portion, and the first insulating layer blocks a diffusion of hydrogen radicals with a higher rate than the second insulating layer.

公开(公告)号：US20210028185A1

公开(公告)日：2021-01-28

申请号：US17071332

申请日：2020-10-15

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tetsuya FURUKAWA ,  Tomoaki SHINO ,  Mitsuhiro NOGUCHI ,  Shinichi WATANABE ,  Yukio NISHIDA ,  Hiroyasu TANAKA

IPC: H01L27/11573 ,  H01L27/11526 ,  H01L29/49 ,  H01L29/06 ,  H01L29/51 ,  H01L29/423

Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.

公开(公告)号：US20200066743A1

公开(公告)日：2020-02-27

申请号：US16271992

申请日：2019-02-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tetsuya FURUKAWA ,  Tomoaki SHINO ,  Mitsuhiro NOGUCHI ,  Shinichi WATANABE ,  Yukio NISHIDA ,  Hiroyasu TANAKA

IPC: H01L27/11573 ,  H01L27/11526 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.