公开(公告)号：US20170309501A1

公开(公告)日：2017-10-26

申请号：US15254505

申请日：2016-09-01

Applicant: Toshiba Memory Corporation

Inventor： Yoshinori KITAMURA ,  Katsuhiro SATO ,  Hiroaki ASHIDATE

IPC: H01L21/67 ,  B05C3/00 ,  B05C3/09 ,  H01L21/311

CPC classification number: H01L21/67086 ,  H01L21/31111

Abstract: According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.

公开(公告)号：US20200273727A1

公开(公告)日：2020-08-27

申请号：US16542831

申请日：2019-08-16

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi NAKAOKA ,  Yoshinori KITAMURA ,  Katsuhiro SATO

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank to store a chemical solution to treat a substrate, a pipe having a discharge port through which an air bubble is discharged from a bottom of the treatment tank toward the substrate, and a rod body disposed between the discharge port and the substrate to divide the air bubble.

公开(公告)号：US20210265181A1

公开(公告)日：2021-08-26

申请号：US17315830

申请日：2021-05-10

Applicant: Toshiba Memory Corporation

Inventor： Yoshinori KITAMURA ,  Katsuhiro SATO ,  Hiroaki ASHIDATE

IPC: H01L21/67 ,  H01L21/311

Abstract: According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.