公开(公告)号：US20210265181A1

公开(公告)日：2021-08-26

申请号：US17315830

申请日：2021-05-10

Applicant: Toshiba Memory Corporation

Inventor： Yoshinori KITAMURA ,  Katsuhiro SATO ,  Hiroaki ASHIDATE

IPC: H01L21/67 ,  H01L21/311

Abstract: According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.

公开(公告)号：US20200295027A1

公开(公告)日：2020-09-17

申请号：US16555418

申请日：2019-08-29

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Koichi SAKATA ,  Kazutaka SUZUKI ,  Hiroaki ASHIDATE ,  Katsuhiro SATO ,  Satoshi NAKAOKA

IPC: H01L27/11578 ,  H01L27/11573 ,  H01L27/11565

Abstract: A semiconductor storage device includes a first stacked body, a second stacked body, a first division film, a second division film, and a plurality of discrete films. The a first stacked body includes first electrode layers stacked in a first direction. The second stacked body, above the first stacked body, includes second electrode layers stacked in the first direction. The second semiconductor layer is electrically connected to the first semiconductor layer. The first division film, extending in the first direction through the first stacked body, divides the first stacked body in a second direction crossing the first direction. The second division film, extending in the first direction through the second stacked body, divides the second stacked body in the second direction. The discrete films, extending in the first direction through the second stacked body, are disposed above the first division film.

公开(公告)号：US20210398825A1

公开(公告)日：2021-12-23

申请号：US17464007

申请日：2021-09-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomohiko SUGITA ,  Katsuhiro SATO ,  Hiroaki ASHIDATE

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/687

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

公开(公告)号：US20200273726A1

公开(公告)日：2020-08-27

申请号：US16548263

申请日：2019-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi NAKAOKA ,  Katsuhiro SATO ,  Hiroaki ASHIDATE ,  Shinsuke MURAKI ,  Yuji HASHIMOTO

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

公开(公告)号：US20180233383A1

公开(公告)日：2018-08-16

申请号：US15703630

申请日：2017-09-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki ASHIDATE ,  Hiroyasu Iimori ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/31111 ,  H01L21/67086 ,  H01L21/67253

Abstract: According to an embodiment, a substrate treatment apparatus includes a tank and a control mechanism. The tank houses a substrate including a silicon oxide film and a silicon nitride film, and receives a supply of a phosphoric acid solution capable of selectively etching the silicon nitride film rather than the silicon oxide film. The control mechanism controls an etching state of the silicon nitride film in the tank, by alternately switching two modes based on preset time allocation. The two modes include a first mode in which a first phosphoric acid solution is contact with the substrate and a second mode in which a second phosphoric acid solution with a selection ratio of the silicon nitride film to the silicon oxide film different from that of the first phosphoric acid solution, is contact with the substrate.

公开(公告)号：US20180082862A1

公开(公告)日：2018-03-22

申请号：US15446966

申请日：2017-03-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki ASHIDATE ,  Katsuhiro SATO

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67092 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67265

Abstract: A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.

公开(公告)号：US20170309501A1

公开(公告)日：2017-10-26

申请号：US15254505

申请日：2016-09-01

Applicant: Toshiba Memory Corporation

Inventor： Yoshinori KITAMURA ,  Katsuhiro SATO ,  Hiroaki ASHIDATE

IPC: H01L21/67 ,  B05C3/00 ,  B05C3/09 ,  H01L21/311

CPC classification number: H01L21/67086 ,  H01L21/31111

Abstract: According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.