公开(公告)号：US20180114897A1

公开(公告)日：2018-04-26

申请号：US15850599

申请日：2017-12-21

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Jyunichi OZEKI ,  Hiroyuki OHTORI ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device including a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction; a second magnetic layer having a fixed magnetization direction which is perpendicular to a main surface thereof and which corresponds to the first magnetization direction, and having a top surface including a recess portion or a bottom surface including a recess portion; a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a fixed magnetization direction which is perpendicular to a main surface thereof and which corresponds to the second magnetization direction; and a nonmagnetic layer provided between the first magnetic layer and the third magnetic layer.