公开(公告)号：US20200302984A1

公开(公告)日：2020-09-24

申请号：US16557802

申请日：2019-08-30

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tadashi KAI ,  Masahiko NAKAYAMA ,  Jyunichi OZEKI ,  Shogo ITAI

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C5/06

Abstract: According to one embodiment, a magnetic device includes a stacked body including a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer. The stacked body has a quadrangular planar shape, the stacked body has a first side dimension in a first direction parallel to a surface of a substrate and a thickness in a second direction perpendicular to the surface of the substrate, and a ratio of the first side dimension to the thickness is in a range of 0.10 to 4.0.

公开(公告)号：US20200075671A1

公开(公告)日：2020-03-05

申请号：US16678316

申请日：2019-11-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.

公开(公告)号：US20190259438A1

公开(公告)日：2019-08-22

申请号：US16400048

申请日：2019-05-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16 ,  G11C7/10

Abstract: A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a scurrent level of the second pulse is different from a current level of the first pulse.

公开(公告)号：US20180114897A1

公开(公告)日：2018-04-26

申请号：US15850599

申请日：2017-12-21

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Jyunichi OZEKI ,  Hiroyuki OHTORI ,  Kuniaki SUGIURA ,  Yutaka HASHIMOTO ,  Katsuya NISHIYAMA

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device including a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction; a second magnetic layer having a fixed magnetization direction which is perpendicular to a main surface thereof and which corresponds to the first magnetization direction, and having a top surface including a recess portion or a bottom surface including a recess portion; a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a fixed magnetization direction which is perpendicular to a main surface thereof and which corresponds to the second magnetization direction; and a nonmagnetic layer provided between the first magnetic layer and the third magnetic layer.

公开(公告)号：US20180075895A1

公开(公告)日：2018-03-15

申请号：US15456031

申请日：2017-03-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuya KISHI ,  Tsuneo INABA ,  Daisuke WATANABE ,  Masahiko NAKAYAMA ,  Nobuyuki OGATA ,  Masaru TOKO ,  Hisanori AIKAWA ,  Jyunichi OZEKI ,  Toshihiko NAGASE ,  Young Min EEH ,  Kazuya SAWADA

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C7/1096 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673

Abstract: According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.