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1.发明授权Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same 有权复合氧化物烧结体，溅射靶，透明导电氧化物膜及其制造方法公开(公告)号：US09418771B2
公开(公告)日：2016-08-16
申请号：US14361455
申请日：2012-11-29
Applicant: TOSOH CORPORATION
Inventor： Hideto Kuramochi , Kimiaki Tamano , Hitoshi Iigusa , Ryo Akiike , Tetsuo Shibutami
CPC classification number: H01B1/08 , C04B35/01 , C04B35/6262 , C04B2235/3225 , C04B2235/3244 , C04B2235/3286 , C04B2235/5445 , C04B2235/549 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C23C14/083 , C23C14/086 , C23C14/34 , C23C14/3414 , H01J37/3429
Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.
Abstract translation: 本发明提供了一种复合氧化物烧结体10，其中当铟，锆，锆（In + Zr + Y）为0.05〜4.5原子％，Y /（In + Zr + Y）为0.005〜0.5原子％ ，钇分别由In，Zr和Y表示。 此外，本发明提供一种溅射靶，其包括复合氧化物烧结体10和通过溅射溅射靶获得的透明导电氧化物膜。
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公开(公告)号：US09336920B2
公开(公告)日：2016-05-10
申请号：US14419805
申请日：2013-08-08
Applicant: TOSOH CORPORATION
Inventor： Hideto Kuramochi , Kimiaki Tamano , Ryo Akiike , Hitoshi Iigusa
CPC classification number: H01B1/08 , C04B35/00 , C04B35/01 , C04B35/62695 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/34 , C23C14/3407 , C23C14/3414 , H01J37/3429 , H01J2237/332
Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film.A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.15 at %.
Abstract translation: 提供一种复合氧化物烧结体，可以得到在宽波长范围内具有较低光吸收特性并具有低电阻的氧化物透明导电膜和氧化物透明导电膜。 包含铟，锆，铪和氧的复合氧化物烧结体，其中构成烧结体的元素的原子比满足下式：其中In，Zr和Hf分别是铟，锆和铪的含量：Zr /（In + Zr + Hf）= 0.05〜4.5at％Hf /（In + Zr + Hf）= 0.0002〜0.15at％。
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公开(公告)号：US20150187548A1
公开(公告)日：2015-07-02
申请号：US14419805
申请日：2013-08-08
Applicant: TOSOH CORPORATION
Inventor： Hideto Kuramochi , Kimiaki Tamano , Ryo Akiike , Hitoshi Iigusa
CPC classification number: H01B1/08 , C04B35/00 , C04B35/01 , C04B35/62695 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/34 , C23C14/3407 , C23C14/3414 , H01J37/3429 , H01J2237/332
Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.15 at %
Abstract translation: 提供一种复合氧化物烧结体，可以得到在宽波长范围内具有较低光吸收特性并具有低电阻的氧化物透明导电膜和氧化物透明导电膜。 包含铟，锆，铪和氧的复合氧化物烧结体，其中构成烧结体的元素的原子比满足下式：其中In，Zr和Hf分别是铟，锆和铪的含量：Zr /（In + Zr + Hf）= 0.05〜4.5at％的Hf /（In + Zr + Hf）= 0.0002〜0.15at％
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