公开(公告)号：US09418771B2

公开(公告)日：2016-08-16

申请号：US14361455

申请日：2012-11-29

Applicant: TOSOH CORPORATION

Inventor： Hideto Kuramochi ,  Kimiaki Tamano ,  Hitoshi Iigusa ,  Ryo Akiike ,  Tetsuo Shibutami

IPC: H01B1/08 ,  C04B35/01 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34 ,  H01J37/34

CPC classification number: H01B1/08 ,  C04B35/01 ,  C04B35/6262 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3429

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract translation: 本发明提供了一种复合氧化物烧结体10，其中当铟，锆，锆（In + Zr + Y）为0.05〜4.5原子％，Y /（In + Zr + Y）为0.005〜0.5原子％ ，钇分别由In，Zr和Y表示。 此外，本发明提供一种溅射靶，其包括复合氧化物烧结体10和通过溅射溅射靶获得的透明导电氧化物膜。

公开(公告)号：US09336920B2

公开(公告)日：2016-05-10

申请号：US14419805

申请日：2013-08-08

Applicant: TOSOH CORPORATION

Inventor： Hideto Kuramochi ,  Kimiaki Tamano ,  Ryo Akiike ,  Hitoshi Iigusa

IPC: H01B1/08 ,  C23C14/34 ,  C04B35/01 ,  C04B35/626 ,  C23C14/08 ,  C04B35/00 ,  H01J37/34

CPC classification number: H01B1/08 ,  C04B35/00 ,  C04B35/01 ,  C04B35/62695 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3286 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3429 ,  H01J2237/332

Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film.A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.15 at %.

Abstract translation: 提供一种复合氧化物烧结体，可以得到在宽波长范围内具有较低光吸收特性并具有低电阻的氧化物透明导电膜和氧化物透明导电膜。 包含铟，锆，铪和氧的复合氧化物烧结体，其中构成烧结体的元素的原子比满足下式：其中In，Zr和Hf分别是铟，锆和铪的含量：Zr /（In + Zr + Hf）= 0.05〜4.5at％Hf /（In + Zr + Hf）= 0.0002〜0.15at％。

公开(公告)号：US20150187548A1

公开(公告)日：2015-07-02

申请号：US14419805

申请日：2013-08-08

Applicant: TOSOH CORPORATION

Inventor： Hideto Kuramochi ,  Kimiaki Tamano ,  Ryo Akiike ,  Hitoshi Iigusa

IPC: H01J37/34 ,  C23C14/08 ,  C23C14/34 ,  H01B1/08

CPC classification number: H01B1/08 ,  C04B35/00 ,  C04B35/01 ,  C04B35/62695 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3286 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3429 ,  H01J2237/332

Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.15 at %

Abstract translation: 提供一种复合氧化物烧结体，可以得到在宽波长范围内具有较低光吸收特性并具有低电阻的氧化物透明导电膜和氧化物透明导电膜。 包含铟，锆，铪和氧的复合氧化物烧结体，其中构成烧结体的元素的原子比满足下式：其中In，Zr和Hf分别是铟，锆和铪的含量：Zr /（In + Zr + Hf）= 0.05〜4.5at％的Hf /（In + Zr + Hf）= 0.0002〜0.15at％

公开(公告)号：US20140332735A1

公开(公告)日：2014-11-13

申请号：US14361455

申请日：2012-11-29

Applicant: TOSOH CORPORATION

Inventor： Hideto Kuramochi ,  Kimiaki Tamano ,  Hitoshi Ilgusa ,  Ryo Akiike ,  Tetsuo Shibutami

IPC: H01B1/08 ,  C23C14/34 ,  C23C14/08 ,  H01J37/34

CPC classification number: H01B1/08 ,  C04B35/01 ,  C04B35/6262 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/549 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3429

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract translation: 本发明提供了一种复合氧化物烧结体10，其中当铟，锆，锆（In + Zr + Y）为0.05〜4.5原子％，Y /（In + Zr + Y）为0.005〜0.5原子％ ，钇分别由In，Zr和Y表示。 此外，本发明提供一种溅射靶，其包括复合氧化物烧结体10和通过溅射溅射靶获得的透明导电氧化物膜。

公开(公告)号：US11377725B2

公开(公告)日：2022-07-05

申请号：US17031294

申请日：2020-09-24

Applicant: TOSOH CORPORATION

Inventor： Ryo Akiike ,  Yuya Tsuchida ,  Hideto Kuramochi

IPC: C04B35/01 ,  C04B35/495 ,  H01B1/08 ,  C23C14/34 ,  C03C17/245 ,  C04B35/626 ,  H01L31/18 ,  H01B1/00 ,  C04B35/64 ,  H01L27/30 ,  H01L31/0224 ,  H01L31/0264 ,  C23C14/08 ,  C23C14/35 ,  H01B13/00 ,  H01J37/34

Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

公开(公告)号：US10815564B2

公开(公告)日：2020-10-27

申请号：US16078488

申请日：2017-02-20

Applicant: TOSOH CORPORATION

Inventor： Ryo Akiike ,  Yuya Tsuchida ,  Hideto Kuramochi

IPC: C23C14/08 ,  C23C14/35 ,  C04B35/01 ,  H01B1/08 ,  C23C14/34 ,  C03C17/245 ,  C04B35/626 ,  H01L31/18 ,  H01B1/00 ,  C04B35/495 ,  C04B35/64 ,  H01L27/30 ,  H01L31/0224 ,  H01L31/0264 ,  H01B13/00

Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

公开(公告)号：US12241147B2

公开(公告)日：2025-03-04

申请号：US17999050

申请日：2021-05-17

Applicant: TOSOH CORPORATION

Inventor： Ryo Akiike ,  Yoichiro Koda ,  Masami Mesuda

IPC: C22C30/00 ,  C01B33/06 ,  C22C24/00 ,  H10N10/851

Abstract: A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

公开(公告)号：US11839158B2

公开(公告)日：2023-12-05

申请号：US17422953

申请日：2020-01-15

Applicant: TOSOH CORPORATION

Inventor： Yoichiro Koda ,  Ryo Akiike ,  Hideto Kuramochi

IPC: C22C28/00 ,  H10N10/855 ,  C22C1/04 ,  B22F3/14

CPC classification number: H10N10/855 ,  C22C1/04 ,  C22C28/00 ,  B22F3/14 ,  B22F2201/02 ,  B22F2201/11

Abstract: Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.
Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:

45 atm %≤Si/(Ru+Si)≤70 atm %

30 atm %≤Ru/(Ru+Si)≤55 atm %.

公开(公告)号：US11793077B2

公开(公告)日：2023-10-17

申请号：US17422953

申请日：2020-01-15

Applicant: TOSOH CORPORATION

Inventor： Yoichiro Koda ,  Ryo Akiike ,  Hideto Kuramochi

IPC: C22C28/00 ,  H10N10/855 ,  C22C1/04 ,  B22F3/14

CPC classification number: H10N10/855 ,  C22C1/04 ,  C22C28/00 ,  B22F3/14 ,  B22F2201/02 ,  B22F2201/11

Abstract: Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.
Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following:

45 atm %≤Si/(Ru+Si)≤70 atm %

30 atm %≤Ru/(Ru+Si)≤55 atm %.

公开(公告)号：US20150295116A1

公开(公告)日：2015-10-15

申请号：US14443201

申请日：2013-11-18

Applicant: TOSOH CORPORATION

Inventor： Ryo Akiike ,  Hideto Kuramochi ,  Kimiaki Tamano

IPC: H01L31/072 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01L31/072 ,  C04B35/453 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3298 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/602 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C23C14/08 ,  C23C14/34 ,  C23C14/3414 ,  H01J37/3426 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: To provide an oxide sintered body for a sputtering target, which is capable of adding specific elements to from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell.An oxide sintered body which contains zinc (Zn) and at least one type of element (X) (excluding a case where magnesium is added alone) that has an ionization potential Ip of 4.5 eV≦Ip≦8.0 eV and an atomic radius d of 1.20 Å≦d≦2.50 Å and which has a composition ratio (atomic ratio) of 0.0001≦X/(Zn+X)≦0.20 and a sintered density of at least 95%.

Abstract translation: 为了提供能够将化合物薄膜太阳能电池的n型半导体层的特定元素添加到p型半导体层表面的溅射靶的氧化物烧结体。 含有锌（Zn）和至少一种元素（X）（不包括单独加入镁的情况）的氧化物烧结体，其电离电位Ip为4.5eV＆nlE; Ip＆nlE; 8.0eV，原子半径d为 其组成比（原子比）为0.0001＆nlE; X /（Zn + X）＆nlE; 0.20，烧结密度为95％以上。