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公开(公告)号:US09917218B2
公开(公告)日:2018-03-13
申请号:US15114267
申请日:2014-02-06
发明人: Sachin Kinge , Enrique Canovas Diaz , Mischa Bonn
IPC分类号: H01L31/0352 , H01L31/18
CPC分类号: H01L31/035218 , H01L21/0237 , H01L21/02521 , H01L21/0256 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/035236 , H01L31/1836 , H01L31/1868
摘要: The present invention presents a process for preparing a quantum dot array comprising at least the steps of: (a) providing a crystalline semiconductor substrate surface; (b) depositing quantum dots on the said substrate surface by a process of successive ionic layer adsorption and reaction (SILAR). The steps can be repeated to build up a quantum dot superlattice structure.