Positive resist composition and resist pattern forming method
    1.
    发明授权
    Positive resist composition and resist pattern forming method 有权
    正抗蚀剂组合物和抗蚀剂图案形成方法

    公开(公告)号:US07687221B2

    公开(公告)日:2010-03-30

    申请号:US11813765

    申请日:2005-12-14

    IPC分类号: G03F7/039 G03F7/20 G03F7/30

    摘要: Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.

    摘要翻译: 公开了能够提供能够形成具有降低LER的高分辨率图案的正型抗蚀剂组合物和抗蚀剂图案形成方法的正性抗蚀剂组合物,正性抗蚀剂组合物包含具有酸解离性,溶解抑制基团的树脂组分(A) 并且在酸的作用下表现出增加的碱溶解性,以及产生暴露酸的酸产生剂组分(B),其中树脂组分(A)含有具有衍生自下述结构单元(a1)的高分子化合物(A1) 羟基苯乙烯和由具有酸解离性,溶解抑制基团,氟原子或氟代低级烷基在α-位键合的丙烯酸酯的结构单元(a2)。

    Positive Resist Composition and Method of Forming Resist Pattern
    2.
    发明申请
    Positive Resist Composition and Method of Forming Resist Pattern 有权
    正电阻组合物和形成抗蚀剂图案的方法

    公开(公告)号:US20080241747A1

    公开(公告)日:2008-10-02

    申请号:US10586694

    申请日:2005-01-14

    IPC分类号: G03F7/004 G03F7/26

    摘要: A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).

    摘要翻译: 显示出大的曝光裕度,优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物,以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。 该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分(A)和在曝光时产生酸的酸产生剂组分(B),其中树脂组分 )包含由下述通式(I)表示的结构单元(a1),其中通过用酸取代上述通式(I)中的羟基已被保护的结构单元(a2) 由下述通式(II)表示的可离解的溶解抑制基团(II)和其中通式(I)中的羟基用其氢原子进行保护而被保护的结构单元(a3) 无环酸解离,溶解抑制组(III)。

    Positive resist composition and method of forming resist pattern
    3.
    发明授权
    Positive resist composition and method of forming resist pattern 有权
    正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US07727701B2

    公开(公告)日:2010-06-01

    申请号:US10586694

    申请日:2005-01-14

    摘要: A positive resist composition that exhibits a large exposure margin, and excellent levels of resolution and dry etching resistance, as well as a method of forming a resist pattern that uses the positive resist composition. This resist composition includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) contains a structural unit (a1) represented by a general formula (I) shown below, a structural unit (a2) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acid dissociable, dissolution inhibiting group (II) represented by a general formula (II) shown below, and a structural unit (a3) in which a hydroxyl group within the above general formula (I) has been protected by substituting the hydrogen atom thereof with an acyclic acid dissociable, dissolution inhibiting group (III).

    摘要翻译: 显示出大的曝光裕度,优异的分辨率和耐干蚀刻性的阳性抗蚀剂组合物,以及形成使用正性抗蚀剂组合物的抗蚀剂图案的方法。 该抗蚀剂组合物包括含有酸解离的溶解抑制基团并在酸的作用下显示增加的碱溶性的树脂组分(A)和在曝光时产生酸的酸产生剂组分(B),其中树脂组分 )包含由下述通式(I)表示的结构单元(a1),其中通过用酸取代上述通式(I)中的羟基已被保护的结构单元(a2) 由下述通式(II)表示的可离解的溶解抑制基团(II)和其中通式(I)中的羟基用其取代氢原子进行保护的结构单元(a3) 无环酸解离,溶解抑制组(III)。

    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    4.
    发明申请
    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
    积极抵抗组合和阻力图形成方法

    公开(公告)号:US20090047600A1

    公开(公告)日:2009-02-19

    申请号:US11813765

    申请日:2005-12-14

    IPC分类号: G03C1/73 G03F7/20

    摘要: Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.

    摘要翻译: 公开了能够提供能够形成具有降低LER的高分辨率图案的正型抗蚀剂组合物和抗蚀剂图案形成方法的正性抗蚀剂组合物,正性抗蚀剂组合物包含具有酸解离性,溶解抑制基团的树脂组分(A) 并且在酸的作用下表现出增加的碱溶解性,以及产生暴露酸的酸产生剂组分(B),其中树脂组分(A)含有具有衍生自下述结构单元(a1)的高分子化合物(A1) 羟基苯乙烯和由具有酸解离性,溶解抑制基团,氟原子或氟化低级烷基在α-位上结合的丙烯酸酯衍生的结构单元(a2)。

    Positive photoresist composition and method for forming resist pattern
    6.
    发明申请
    Positive photoresist composition and method for forming resist pattern 有权
    正型光致抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US20070042288A1

    公开(公告)日:2007-02-22

    申请号:US10554380

    申请日:2004-04-22

    IPC分类号: G03C1/00

    摘要: The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.

    摘要翻译: 本发明提供一种正光致抗蚀剂组合物,其具有高水平的耐蚀刻性并获得高分辨率,并且能够使用电子束曝光步骤形成精细图案,以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法 组成。 用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分(A),暴露时产生酸的酸产生剂组分(B)和有机溶剂(C),其中组分 (A)包含含有由羟基苯乙烯衍生的第一结构单元(a1)和由具有醇羟基的(甲基)丙烯酸酯衍生的第二结构单元(a2)和结构单元的一部分羟基的共聚物 (a1)和结构单元(a2)的醇羟基被酸解离,溶解抑制基团保护。

    Positive resist composition and method of formation of resist patterns
    7.
    发明申请
    Positive resist composition and method of formation of resist patterns 有权
    抗蚀剂组合物的形成和抗蚀剂图案的形成方法

    公开(公告)号:US20060247346A1

    公开(公告)日:2006-11-02

    申请号:US10553083

    申请日:2004-04-15

    IPC分类号: C08K5/41

    CPC分类号: G03F7/0397

    摘要: The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (al) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (al) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)

    摘要翻译: 本发明提供了具有高耐蚀刻性和高分辨率的正型抗蚀剂组合物,以及通过使用正性抗蚀剂组合物形成图案的方法。 正型抗蚀剂组合物含有具有酸解离性,溶解抑制基团,在酸作用下表现出增加的碱溶解性的树脂成分(A)和暴露时产生酸的酸产生剂成分(B),其中树脂成分 (A)是包含由下述通式(I)表示的结构单元(a1)的聚合物,并且单元(a1)的一部分羟基通过用酸解离而置换羟基的氢原子来保护 ,由下述通式(II)表示的溶解抑制基团:(其中,R是氢原子或甲基,R 1是具有1至5个碳原子的烷基,R 0 > 2是具有1至5个碳原子的烷基或氢原子,X是具有10至16个碳原子的脂族多环基团或具有10至16个碳原子的芳族多环烃基。

    Positive resist composition and method of formation of resist patterns
    8.
    发明授权
    Positive resist composition and method of formation of resist patterns 有权
    抗蚀剂组合物的形成和抗蚀剂图案的形成方法

    公开(公告)号:US07524604B2

    公开(公告)日:2009-04-28

    申请号:US10553083

    申请日:2004-04-15

    IPC分类号: G03F7/039 G03F7/38

    CPC分类号: G03F7/0397

    摘要: The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (a1) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (a1) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below: (wherein, R is a hydrogen atom or methyl group, R1 is an alkyl group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)

    摘要翻译: 本发明提供了具有高耐蚀刻性和高分辨率的正型抗蚀剂组合物,以及通过使用正性抗蚀剂组合物形成图案的方法。 正型抗蚀剂组合物含有具有酸解离性,溶解抑制基团,在酸作用下表现出增加的碱溶解性的树脂成分(A)和暴露时产生酸的酸产生剂成分(B),其中树脂成分 (A)是包含由下述通式(I)表示的结构单元(a1)的聚合物,单元(a1)的一部分羟基通过用酸解离而置换羟基的氢原子来保护 ,由下述通式(II)表示的溶解抑制基团:(其中,R为氢原子或甲基,R 1为碳原子数1〜5的烷基,R 2为碳原子数为1〜5的烷基) 或氢原子,X为碳原子数为10〜16的脂肪族多环基或碳原子数为10〜16的芳香族多环烃基。)

    Positive photoresist composition and method for forming resist pattern
    9.
    发明授权
    Positive photoresist composition and method for forming resist pattern 有权
    正型光致抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US07449276B2

    公开(公告)日:2008-11-11

    申请号:US10554380

    申请日:2004-04-22

    IPC分类号: G03F7/004 G03F7/039

    摘要: The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.

    摘要翻译: 本发明提供一种正光致抗蚀剂组合物,其具有高水平的耐蚀刻性并获得高分辨率,并且能够使用电子束曝光步骤形成精细图案,以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法 组成。 用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分(A),暴露时产生酸的酸产生剂组分(B)和有机溶剂(C),其中组分 (A)包含含有由羟基苯乙烯衍生的第一结构单元(a 1)和由具有醇羟基的(甲基)丙烯酸酯衍生的第二结构单元(a 2)和一部分羟基的羟基的共聚物 结构单元(a 1)和结构单元(a 2)的醇羟基被酸解离,溶解抑制基团保护。