POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    2.
    发明申请
    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
    积极抵抗组合和阻力图形成方法

    公开(公告)号:US20090047600A1

    公开(公告)日:2009-02-19

    申请号:US11813765

    申请日:2005-12-14

    IPC分类号: G03C1/73 G03F7/20

    摘要: Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.

    摘要翻译: 公开了能够提供能够形成具有降低LER的高分辨率图案的正型抗蚀剂组合物和抗蚀剂图案形成方法的正性抗蚀剂组合物,正性抗蚀剂组合物包含具有酸解离性,溶解抑制基团的树脂组分(A) 并且在酸的作用下表现出增加的碱溶解性,以及产生暴露酸的酸产生剂组分(B),其中树脂组分(A)含有具有衍生自下述结构单元(a1)的高分子化合物(A1) 羟基苯乙烯和由具有酸解离性,溶解抑制基团,氟原子或氟化低级烷基在α-位上结合的丙烯酸酯衍生的结构单元(a2)。

    Anti-reflection film forming material, and method for forming resist pattern using the same
    3.
    发明申请
    Anti-reflection film forming material, and method for forming resist pattern using the same 有权
    防反射膜形成材料,以及使用其形成抗蚀剂图案的方法

    公开(公告)号:US20090253077A1

    公开(公告)日:2009-10-08

    申请号:US12385195

    申请日:2009-04-01

    摘要: The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

    摘要翻译: 根据本发明的抗反射成膜材料包括(a)具有乙酸乙烯酯构成单元的水溶性树脂,和(b)具有由以下通式表示的构成单元的化合物。 其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子,具有1-10个碳原子的烷基或由 - (CH2)n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - (CH 2)n -O-R 5 -R 6表示的基团,其中:R 5表示直接键或可以被-O-间隔的具有1至10个碳原子的亚烷基链; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基, n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

    Anti-reflection film forming material, and method for forming resist pattern using the same
    4.
    发明授权
    Anti-reflection film forming material, and method for forming resist pattern using the same 有权
    防反射膜形成材料,以及使用其形成抗蚀剂图案的方法

    公开(公告)号:US08216775B2

    公开(公告)日:2012-07-10

    申请号:US12385195

    申请日:2009-04-01

    IPC分类号: H01L21/027 G03F7/11 G03F7/30

    摘要: The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

    摘要翻译: 根据本发明的抗反射成膜材料包括(a)具有乙酸乙烯酯构成单元的水溶性树脂,和(b)具有由以下通式表示的构成单元的化合物。 其中R1和R2表示直接键或亚甲基链; R3和R4表示氢原子,具有1-10个碳原子的烷基或由 - (CH2)n-O-R5-R6表示的基团; 并且R 3和R 4中的至少一个是由 - (CH 2)n -O-R 5 -R 6表示的基团,其中:R 5表示直接键或具有1〜10个碳原子的亚烷基,其可以被-O- ; R6表示一部分或全部氢原子被氟原子取代的碳原子数1〜10的烷基, n表示0〜10的整数。其中R1和R2中存在的碳原子总数为1或2。

    Composition for formation of anti-reflection film, and method for formation of resist pattern using the same
    5.
    发明授权
    Composition for formation of anti-reflection film, and method for formation of resist pattern using the same 有权
    用于形成抗反射膜的组合物以及使用其形成抗蚀剂图案的方法

    公开(公告)号:US08158328B2

    公开(公告)日:2012-04-17

    申请号:US12449494

    申请日:2008-01-08

    IPC分类号: G03F7/11 G03F7/26

    摘要: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

    摘要翻译: 提供了一种在抗蚀剂膜上形成抗反射膜的组合物,其处理性能优异,并且在形成膜之后不伴随着沉积物等的产生。 提供一种用于形成设置在抗蚀剂膜上的抗反射膜的组合物,其至少包含一些含氟表面活性剂和一定的水溶性成膜组分。 用于形成抗反射膜的组合物可以容易地处理,对健康或环境没有不利影响,并且即使在形成抗反射膜之后也避免沉积物等的产生。

    COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    6.
    发明申请
    COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 失效
    化合物,阳性电阻组合物和电阻图案形成方法

    公开(公告)号:US20090117488A1

    公开(公告)日:2009-05-07

    申请号:US11994602

    申请日:2006-06-30

    IPC分类号: G03F7/004 C07C69/76 G03F7/26

    摘要: The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].

    摘要翻译: 本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。 正型抗蚀剂组合物包括由下述通式(I)表示的化合物。 本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。 式(I)中,R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基,其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团,R21〜R24中的两个表示氢原子,其余表示酸解离,溶解抑制基团。 X为下述通式(Ia)或(Ib)表示的基团。

    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
    7.
    发明申请
    POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
    积极抵抗组合和阻力图形成方法

    公开(公告)号:US20090092921A1

    公开(公告)日:2009-04-09

    申请号:US11914451

    申请日:2006-04-26

    IPC分类号: G03F7/004 G03F7/20

    摘要: A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.

    摘要翻译: 正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶解性的基材组分(A)和暴露时产生酸的酸产生剂组分(B),其中所述基材组分(A)含有化合物 (A1),其中含有两个或多个酚羟基并且分子量为300〜2500的多元酚化合物(a)中的酚羟基被酸解离的溶解抑制基团保护,化合物(A1)表现出 每分子保护基团数目的标准偏差(sn)小于1,或每分子保护率(mol%)的标准偏差(sp)小于16.7。

    Multilayered body for photolithographic patterning
    8.
    发明申请
    Multilayered body for photolithographic patterning 有权
    用于光刻图案的多层体

    公开(公告)号:US20050008972A1

    公开(公告)日:2005-01-13

    申请号:US10901207

    申请日:2004-07-29

    CPC分类号: G03F7/091 G03F7/0382

    摘要: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

    摘要翻译: 公开了一种用于光致抗蚀剂层的光刻图案的新型多层体,当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时,可以从其获得具有优异横截面轮廓的图案化抗蚀剂层 和特定光致抗蚀剂组合物的负性光致抗蚀剂层,其包含:(A)100重量份的碱溶性树脂; (B)0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和(C)3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

    Positive resist composition and method of forming resist pattern
    9.
    发明授权
    Positive resist composition and method of forming resist pattern 有权
    正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US07871753B2

    公开(公告)日:2011-01-18

    申请号:US12090826

    申请日:2006-11-09

    IPC分类号: G03F7/004

    摘要: A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).

    摘要翻译: 本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分(A)和暴露时产生酸的酸产生剂组分(B),其中树脂组分(A)包括 含有羧基的结构单元(a0)和选自由通式(a1-2)表示的结构单元和由通式(a1-2)表示的结构单元)组成的组中的至少一种结构单元(a1) -4)(式中,Y表示脂肪族环状或低级烷基,n表示0〜3的整数,m表示0或1,R表示氢原子,卤原子,低级 烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。

    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    10.
    发明申请
    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    正电阻组合物和形成电阻图案的方法

    公开(公告)号:US20090162786A1

    公开(公告)日:2009-06-25

    申请号:US12090826

    申请日:2006-11-09

    IPC分类号: G03F7/20 G03F7/00

    摘要: A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).

    摘要翻译: 本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分(A)和暴露时产生酸的酸产生剂组分(B),其中树脂组分(A)包括 含有羧基的结构单元(a0)和选自由通式(a1-2)表示的结构单元和由通式(a1-2)表示的结构单元)组成的组中的至少一种结构单元(a1) -4)(式中,Y表示脂肪族环状或低级烷基,n表示0〜3的整数,m表示0或1,R表示氢原子,卤原子,低级 烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。