摘要:
The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.
摘要:
Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.
摘要:
The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.
摘要:
The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.
摘要:
A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.
摘要:
The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要:
A positive resist composition includes a base material component (A) which exhibits increased alkali solubility under an action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base material component (A) contains a compound (A1) in which phenolic hydroxyl groups in a polyhydric phenol compound (a) containing two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are protected with acid dissociable, dissolution inhibiting groups, and the compound (A1) exhibits a standard deviation (sn) of the number of protective groups per molecule of less than 1, or exhibits a standard deviation (sp) of a protection ratio (mol %) per molecule of less than 16.7.
摘要:
Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要:
A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).
摘要翻译:本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分(A)和暴露时产生酸的酸产生剂组分(B),其中树脂组分(A)包括 含有羧基的结构单元(a0)和选自由通式(a1-2)表示的结构单元和由通式(a1-2)表示的结构单元)组成的组中的至少一种结构单元(a1) -4)(式中,Y表示脂肪族环状或低级烷基,n表示0〜3的整数,m表示0或1,R表示氢原子,卤原子,低级 烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。
摘要:
A positive resist composition of the present invention includes a resin component (A) which displays increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the resin component (A) includes a structural unit (a0) containing a carboxyl group, and at least one structural unit (a1) selected from the group consisting of a structural unit represented by a general formula (a1-2) and a structural unit represented by a general formula (a1-4) shown below: (in the formula, Y represents an aliphatic cyclic group or a lower alkyl group; n represents an integer from 0 to 3; m represents 0 or 1; R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; and R1′ and R2′ each independently represents a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms.).
摘要翻译:本发明的正型抗蚀剂组合物包括在酸的作用下显示增加的碱溶性的树脂组分(A)和暴露时产生酸的酸产生剂组分(B),其中树脂组分(A)包括 含有羧基的结构单元(a0)和选自由通式(a1-2)表示的结构单元和由通式(a1-2)表示的结构单元)组成的组中的至少一种结构单元(a1) -4)(式中,Y表示脂肪族环状或低级烷基,n表示0〜3的整数,m表示0或1,R表示氢原子,卤原子,低级 烷基或卤代低级烷基; R 1'和R 2'各自独立地表示氢原子或碳原子数为1〜5的低级烷基。