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    Thin film magnetic head
    2.
    发明授权
    Thin film magnetic head 有权
    薄膜磁头

    公开(公告)号：US06493194B1

    公开(公告)日：2002-12-10

    申请号：US09539051

    申请日：2000-03-30

    申请人： Masaya Sakaguchi ,  Hiroyasu Tsuji ,  Satoru Mitani ,  Tadashi Kimura ,  Hiroyoshi Sekiguchi

    发明人： Masaya Sakaguchi ,  Hiroyasu Tsuji ,  Satoru Mitani ,  Tadashi Kimura ,  Hiroyoshi Sekiguchi

    IPC分类号： G11B5127

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A thin film magnetic head which includes a magnetoresistive layer selectively formed; a magnetic bias layer sandwiching said magnetoresistive layer; a pair of leads for detecting magnetic resistance; and a cap layer formed under the lead between the magnetoresistive layer. This configuration enables to accurately specify a magnetic response region by both ends of the cap layers, concentrating the current from the lead onto the magnetic response region through a tip of the cap layer for improving a S/N ratio.

    摘要翻译： 一种薄膜磁头，其包括选择性地形成的磁阻层; 夹着所述磁阻层的磁偏置层; 用于检测磁阻的一对引线; 以及形成在磁阻层之下的引线下方的盖层。 该配置能够通过盖层的两端精确地指定磁响应区域，通过盖层的顶端将电流从引线集中到磁响应区域，以提高S / N比。

    Thin film magnetic head and method for fabricating same
    3.
    发明授权
    Thin film magnetic head and method for fabricating same 有权
    薄膜磁头及其制造方法

    公开(公告)号：US06407885B1

    公开(公告)日：2002-06-18

    申请号：US09536368

    申请日：2000-03-28

    申请人： Akira Ahagon ,  Masaya Sakaguchi ,  Hiroyasu Tsuji ,  Satoru Mitani

    发明人： Akira Ahagon ,  Masaya Sakaguchi ,  Hiroyasu Tsuji ,  Satoru Mitani

    IPC分类号： G11B5147

    CPC分类号： G11B5/3116 ,  G11B5/313

    摘要： A thin film magnetic head that provides, despite a narrow head track width, strong recording magnetic fields and demonstrates a sufficiently high recording capability for the high Hc recording media. The lower magnetic pole is formed with a lower write chip section and a shared shield section, while the upper magnetic pole is formed with an upper write chip section and a yoke section. The lower and upper write chip sections are made of a high Bs magnetic material, the yoke section is made of a high &rgr; magnetic material, and the shared shield section is made of permalloy or the like magnetic material. The upper write chip section is longer than the lower write chip section (which corresponds to the head gap depth); this configuration makes the contact area with the yoke section greater, even if the head track width is narrow, and provides strong recording magnetic fields.

    摘要翻译： 尽管磁头宽度窄，磁记录磁场强，并且为高Hc记录介质表现出足够高的记录能力的薄膜磁头。 下磁极形成有下部写入芯片部分和共享屏蔽部分，而上部磁极形成有上部写入芯片部分和磁轭部分。 下部和上部写入芯片部分由高Bs磁性材料制成，磁轭部分由高rho磁性材料制成，共享屏蔽部分由坡莫合金或类似磁性材料制成。 上部写入芯片部分比下部写入芯片部分（对应于磁头间隙深度）长; 即使磁头宽度较窄，也能够提供与磁轭部的接触面积较大的记录磁场。

    Baking system for plasma display panel and layout method for said system
    5.
    发明授权
    Baking system for plasma display panel and layout method for said system 失效
    用于等离子体显示面板的烘烤系统和所述系统的布局方法

    公开(公告)号：US06998578B2

    公开(公告)日：2006-02-14

    申请号：US10421729

    申请日：2003-04-24

    申请人： Hiroyasu Tsuji ,  Makoto Morita ,  Masanori Suzuki ,  Hihuo Noiri ,  Michiro Aoki ,  Takahiro Takeda

    发明人： Hiroyasu Tsuji ,  Makoto Morita ,  Masanori Suzuki ,  Hihuo Noiri ,  Michiro Aoki ,  Takahiro Takeda

    IPC分类号： F27D11/00

    CPC分类号： H01J9/265 ,  H01J2217/491

    摘要： A baking system for a plasma display panel which comprises a clean room 1 and a baking furnace having an upper passage 11 for conveying a plasma display panel glass substrate 5 during baking from an inlet 15 of the furnace 3, and a lower passage 13 for conveying the baked substrate 5 in the upper passage 11 towards an outlet of the furnace 3, both of the inlet and the outlet being provided at the same end of the furnace 3, characterized in that only the inlet 15 and the outlet 17 are connected to a clean room 1, while keeping a body thereof outside the clean room 1. Also, there is disclosed a layout method for such a baking system.

    摘要翻译： 一种用于等离子体显示面板的烘烤系统，其包括洁净室1和烘烤炉，其具有用于在烘烤期间从炉3的入口15输送等离子体显示面板玻璃基板5的上通道11和用于输送的下通道13 上部通道11中的烘烤基板5朝向炉子3的出口，两个入口和出口均设置在炉3的同一端，其特征在于仅将入口15和出口17连接到 洁净室1，同时将其身体保持在洁净室1外面。 此外，公开了这种烘焙系统的布置方法。

    Image display and method for evaluating glass substrate to be used in same
    6.
    发明申请
    Image display and method for evaluating glass substrate to be used in same 失效
    用于评估使用玻璃基板的图像显示和方法

    公开(公告)号：US20050062416A1

    公开(公告)日：2005-03-24

    申请号：US10499339

    申请日：2003-11-27

    申请人： Daisuke Adachi ,  Hiroyasu Tsuji ,  Keisuke Sumida

    发明人： Daisuke Adachi ,  Hiroyasu Tsuji ,  Keisuke Sumida

    IPC分类号： H01J11/44 ,  G01N21/33 ,  G09F9/30 ,  H01J17/16 ,  H01J17/49

    CPC分类号： H01J11/12 ,  H01J11/34 ,  H01J11/44 ,  H01J2211/442 ,  Y10S359/90

    摘要： The present invention provides an image display device capable of displaying a good image by suppressing yellowing of a glass substrate, and an evaluating method of the glass substrate. The image display device is formed using the glass substrate where reflectance at wavelength of 220 nm is 5% or lower. In the evaluating method of the glass substrate for the image display device, Sn++ content in the glass substrate is analyzed using reflectance at wavelength of 220 nm.

    摘要翻译： 本发明提供一种能够通过抑制玻璃基板的黄变而显示良好图像的图像显示装置，以及玻璃基板的评价方法。 图像显示装置使用其波长为220nm的反射率为5％以下的玻璃基板形成。 在图像显示装置用玻璃基板的评价方法中，使用220nm的波长的反射率来分析玻璃基板中的Sn ++含量。

    Image display device and manufacturing method of the same
    8.
    发明申请
    Image display device and manufacturing method of the same 失效
    图像显示装置及其制造方法相同

    公开(公告)号：US20070209394A1

    公开(公告)日：2007-09-13

    申请号：US11783849

    申请日：2007-04-12

    申请人： Daisuke Adachi ,  Hiroyasu Tsuji ,  Keisuke Sumida

    发明人： Daisuke Adachi ,  Hiroyasu Tsuji ,  Keisuke Sumida

    IPC分类号： C03B18/02

    CPC分类号： H01J9/241 ,  C03B18/20 ,  C03C15/00 ,  C03C19/00 ,  H01J11/12 ,  H01J11/34 ,  H01J11/44 ,  Y02P40/57

    摘要： The present invention provides an image display device capable of displaying a good image by suppressing yellowing of a glass substrate, and a high-yield manufacturing method of the glass substrate. The image display device is formed of a front-side glass substrate and a back-side glass substrate. In this manufacturing method, a glass substrate is used as the front-side glass substrate when Sn++ content in the glass substrate is a predetermined value or less, and the glass substrate is used as the back-side glass substrate when the Sn++ content exceeds the predetermined value.

    摘要翻译： 本发明提供一种能够通过抑制玻璃基板的黄变而显示良好图像的图像显示装置，以及玻璃基板的高成品率制造方法。 图像显示装置由前侧玻璃基板和背面玻璃基板形成。 在该制造方法中，当玻璃基板中的Sn ++含量为规定值以下时，使用玻璃基板作为前侧玻璃基板，当Sn ++含量超过该值时，将玻璃基板用作背面玻璃基板 预定值。

    Non-magnetic single crystal Mn--Zn ferrite for floating type magnetic heads
    10.
    发明授权
    Non-magnetic single crystal Mn--Zn ferrite for floating type magnetic heads 失效
    用于浮动型磁头的非磁性单晶Mn-Zn铁氧体

    公开(公告)号：US5629100A

    公开(公告)日：1997-05-13

    申请号：US580495

    申请日：1995-12-29

    申请人： Masato Naganawa ,  Hiroyasu Tsuji

    发明人： Masato Naganawa ,  Hiroyasu Tsuji

    IPC分类号： C30B1/10 ,  C30B1/02 ,  C30B29/22 ,  C30B29/24 ,  G11B5/10 ,  G11B5/31 ,  G11B5/60 ,  B32B9/00

    CPC分类号： G11B5/60 ,  C30B1/02 ,  C30B29/24 ,  G11B5/10 ,  G11B5/3103 ,  G11B5/6005 ,  Y10S428/90 ,  Y10T428/1157 ,  Y10T428/26 ,  Y10T428/2982

    摘要： A non-magnetic single crystal of Mn--Zn ferrite obtained by a solid phase reaction process including the steps of contacting a seed single crystal ferrite with a polycrystal crystal ferrite and producing the single crystal by growing the single crystal in a direction from the seed single crystal toward the polycrystal under heating. The single crystal of Mn--Zn ferrite has a composition defined by points A, B, C, D and E in a three-phase diagram of Fe.sub.2 O.sub.3 --MnO--ZnO, in which:A: Fe.sub.2 O.sub.3 40 mol %, MnO 10 mol %, ZnO 50 mol %;B: Fe.sub.2 O.sub.3 40 mol %, MnO 35 mol %, ZnO 25 mol %;C: Fe.sub.2 O.sub.3 70 mol %, MnO 5 mol %, ZnO 25 mol %;D: Fe.sub.2 O.sub.3 70 mol %, MnO 2 mol %, ZnO 28 mol %; andE: Fe.sub.2 O.sub.3 48 mol %, MnO 2 mol %, ZnO 50 mol %.

    摘要翻译： 通过固相反应方法获得的Mn-Zn铁氧体的非磁性单晶，其包括以下步骤：使种子单晶铁氧体与多晶晶体铁氧体接触，并通过在晶种单晶的方向上生长单晶来制造单晶 在加热下向多晶体晶体。 在Fe2O3-MnO-ZnO的三相图中，Mn-Zn铁氧体的单晶具有A，B，C，D和E点的组成，其中：A：Fe2O3为40mol％，MnO为10mol％ ，ZnO 50mol％; B：Fe 2 O 3 40mol％，MnO 35mol％，ZnO 25mol％ C：Fe2O3 70mol％，MnO 5mol％，ZnO 25mol％; D：Fe2O3 70摩尔％，MnO 2摩尔％，ZnO 28摩尔％ 和E：Fe2O3 48mol％，MnO 2mol％，ZnO 50mol％。