公开(公告)号：US20080017851A1

公开(公告)日：2008-01-24

申请号：US11781109

申请日：2007-07-20

申请人： Tae Young CHOI ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

发明人： Tae Young CHOI ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0096 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/107 ,  Y02E10/549

摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

摘要翻译： 公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。

公开(公告)号：US08278648B2

公开(公告)日：2012-10-02

申请号：US11781109

申请日：2007-07-20

申请人： Tae Young Choi ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

发明人： Tae Young Choi ,  Bo Sung Kim ,  Keun Kyu Song ,  Seung Hwan Cho

IPC分类号： H01L29/08 ,  H01L51/10

CPC分类号： H01L51/0096 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/107 ,  Y02E10/549

摘要： An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

摘要翻译： 公开了一种简化制造工艺的有机薄膜晶体管（TFT）衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT，第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔，用于将第二接触部分连接到有机TFT的第二接触孔，限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。

公开(公告)号：US09362513B2

公开(公告)日：2016-06-07

申请号：US11782980

申请日：2007-07-25

申请人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

发明人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

IPC分类号： G02B5/08 ,  H01L51/05 ,  H01L27/32

CPC分类号： H01L51/0545 ,  H01L27/3246 ,  H01L51/052

摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

摘要翻译： 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极 薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

公开(公告)号：US20080023695A1

公开(公告)日：2008-01-31

申请号：US11782980

申请日：2007-07-25

申请人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

发明人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song ,  Tae Young Choi

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L27/3246 ,  H01L51/052

摘要： An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

摘要翻译： 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线交叉的数据线，连接到栅极线和数据线并包括有机半导体层的薄膜晶体管，连接到薄的晶体管的像素电极 薄膜晶体管，保护薄膜晶体管的有机保护层，提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

公开(公告)号：US07858971B2

公开(公告)日：2010-12-28

申请号：US11777174

申请日：2007-07-12

申请人： Keun Kyu Song ,  Seung Hwan Cho ,  Bo Sung Kim ,  Young Min Kim ,  Jung Han Shin

发明人： Keun Kyu Song ,  Seung Hwan Cho ,  Bo Sung Kim ,  Young Min Kim ,  Jung Han Shin

IPC分类号： H01L51/00

CPC分类号： H01L27/3274 ,  H01L27/3276 ,  H01L51/0545 ,  H01L51/102

摘要： An organic TFT substrate includes a gate line on a substrate, a pixel electrode in a same plane of the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.

摘要翻译： 有机TFT基板包括在基板上的栅极线，栅极线的同一平面中的像素电极，与栅极线绝缘的数据线，包括连接到栅极线的栅电极的有机TFT，连接到源电极 与栅极线绝缘的绝缘电极，连接到像素电极并与栅电极绝缘的漏电极以及接触源极和漏极之间的有机半导体层以及栅极线上的栅极绝缘层 和栅电极。

公开(公告)号：US08211757B2

公开(公告)日：2012-07-03

申请号：US12871642

申请日：2010-08-30

申请人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song

发明人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song

IPC分类号： H01L21/00

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558 ,  Y10S438/939

摘要： An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

摘要翻译： 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线相交并且限定子像素区域的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据的源电极 线路，面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层，与栅极线平行的钝化层，用于覆盖有机半导体层和有机半导体层的外围区域，以及 用于确定有机半导体层和钝化层的位置的堤绝缘层。

公开(公告)号：US20110053315A1

公开(公告)日：2011-03-03

申请号：US12871642

申请日：2010-08-30

申请人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song

发明人： Seung Hwan CHO ,  Bo Sung Kim ,  Keun Kyu Song

IPC分类号： H01L51/30

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558 ,  Y10S438/939

摘要： An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

摘要翻译： 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线相交并且限定子像素区域的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据的源电极 线路，面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层，与栅极线平行的钝化层，用于覆盖有机半导体层和有机半导体层的外围区域，以及 用于确定有机半导体层和钝化层的位置的堤绝缘层。

公开(公告)号：US07803669B2

公开(公告)日：2010-09-28

申请号：US11766597

申请日：2007-06-21

申请人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song

发明人： Seung Hwan Cho ,  Bo Sung Kim ,  Keun Kyu Song

IPC分类号： H01L21/339

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558 ,  Y10S438/939

摘要： An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

摘要翻译： 有机薄膜晶体管基板包括形成在基板上的栅极线，与栅极线相交并且限定子像素区域的数据线，包括连接到栅极线的栅电极的有机薄膜晶体管，连接到数据的源电极 线路，面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层，与栅极线平行的钝化层，用于覆盖有机半导体层和有机半导体层的外围区域，以及 用于确定有机半导体层和钝化层的位置的堤绝缘层。

公开(公告)号：US08252625B2

公开(公告)日：2012-08-28

申请号：US12724265

申请日：2010-03-15

申请人： Seung Hwan Cho ,  Keun Kyu Song ,  Min Ho Yoon

发明人： Seung Hwan Cho ,  Keun Kyu Song ,  Min Ho Yoon

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558

摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.

摘要翻译： 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。

公开(公告)号：US20100173451A1

公开(公告)日：2010-07-08

申请号：US12724265

申请日：2010-03-15

申请人： Seung Hwan CHO ,  Keun Kyu Song ,  Min Ho Yoon

发明人： Seung Hwan CHO ,  Keun Kyu Song ,  Min Ho Yoon

IPC分类号： H01L51/40 ,  H01L21/336

CPC分类号： H01L51/0545 ,  H01L27/283 ,  H01L51/0558

摘要： The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.

摘要翻译： 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层，以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层，以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层，形成在薄膜晶体管的源电极和漏电极上，从而填充有机半导体层。