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公开(公告)号：US20150168822A1
公开(公告)日：2015-06-18
申请号：US14630825
申请日：2015-02-25
申请人： Tae-Geun KIM , Dong-Wan KIM , Dong-Gun LEE , Seong-Sue KIM
发明人： Tae-Geun KIM , Dong-Wan KIM , Dong-Gun LEE , Seong-Sue KIM
摘要： A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.
摘要翻译： 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一 打开曝光光散射部分和在反射层上的吸收层图案，吸收层图案具有与第一开口光连通的第二开口。
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2.发明申请公开(公告)号：US20130161543A1
公开(公告)日：2013-06-27
申请号：US13585978
申请日：2012-08-15
申请人： Jong-Ju PARK , Dong-Gun LEE , Seong-Sue KIM , Chang-Hoon CHOI
发明人： Jong-Ju PARK , Dong-Gun LEE , Seong-Sue KIM , Chang-Hoon CHOI
IPC分类号： H01L31/0232 , G02B27/44
CPC分类号： G02B5/1876 , G02B5/1857
摘要： A zoneplate includes a first pattern having a first thickness, the first pattern including a first material, and a second pattern adjacent to the first pattern and having a second thickness larger than the first thickness, the second pattern including a second material, incident light incident on the first pattern from the outside passing through the first pattern, and incident light incident on the second pattern from the outside passing through the second pattern.
摘要翻译： 附属区域包括具有第一厚度的第一图案，第一图案包括第一材料和与第一图案相邻的第二图案，并且具有大于第一厚度的第二厚度，第二图案包括第二材料，入射光入射 从外部通过第一图案的第一图案和从通过第二图案的外部入射在第二图案上的入射光。
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公开(公告)号：US20110042587A1
公开(公告)日：2011-02-24
申请号：US12805003
申请日：2010-07-07
申请人： Dong-Gun LEE , Seong-Sue KIM , Hwan-Seok SEO
发明人： Dong-Gun LEE , Seong-Sue KIM , Hwan-Seok SEO
CPC分类号： G21K1/06 , G02B5/1838 , G02B5/1842 , G02B5/1871 , G02B27/4222 , G21K2201/067
摘要： An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.
摘要翻译： EUV投影透镜包括基板和基板上的同心衍射图案。 同心衍射图案相对于EUV光具有异相高度，并且包括在异相高度下EUV光透过率高于约50％的材料。 EUV投影透镜具有高的一阶衍射光效率，并且具有EUV投影透镜的光学系统具有高分辨率。
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公开(公告)号：US20100001199A1
公开(公告)日：2010-01-07
申请号：US12489600
申请日：2009-06-23
申请人： Dong-Gun LEE , Seong-Sue KIM
发明人： Dong-Gun LEE , Seong-Sue KIM
IPC分类号： G01J1/42
摘要： In a method of measuring a phase of a phase shift mask, initial extreme ultraviolet (EUV) light is divided into secondary EUV light portions. The secondary EUV light portions are irradiated onto the phase shift mask as incident EUV light portions, and the phase of the phase shift mask is measured from reflected incident EUV light portions.
摘要翻译： 在测量相移掩模的相位的方法中，初始极紫外（EUV）光被分成次级EUV光部分。 次级EUV光部分作为入射EUV光部分照射到相移掩模上，并且从反射入射的EUV光部分测量相移掩模的相位。
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