公开(公告)号：US20090179211A1

公开(公告)日：2009-07-16

申请号：US11988882

申请日：2006-07-14

申请人： Tae-Kyung Yoo ,  Chang-Tae Kim ,  Keuk Kim

发明人： Tae-Kyung Yoo ,  Chang-Tae Kim ,  Keuk Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38

摘要： The present invention discloses a semiconductor light emitting device including an active layer for generating light by recombination of electron and hole between a first semiconductor layer having first conductivity and a second semiconductor layer having second conductivity different from the first conductivity, the second semiconductor layer being disposed on the active layer. The semiconductor light emitting device comprises first array including a trench having a first inclination angle, and second array including a trench having a second inclination angle different from the first inclination angle.

摘要翻译： 本发明公开了一种半导体发光器件，其包括通过电子和空穴之间的复合产生光的有源层，所述有源层在具有第一导电性的第一半导体层与具有不同于第一导电性的第二导电性的第二半导体层之间，第二半导体层被布置 在活动层。 半导体发光器件包括第一阵列，其包括具有第一倾斜角的沟槽，第二阵列包括具有不同于第一倾斜角的第二倾斜角的沟槽。

公开(公告)号：US20090014751A1

公开(公告)日：2009-01-15

申请号：US11795995

申请日：2005-10-06

申请人： Chang-Tae Kim ,  Keuk Kim ,  Tae Kyung Yoo

发明人： Chang-Tae Kim ,  Keuk Kim ,  Tae Kyung Yoo

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/22

摘要： Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.

摘要翻译： 本文公开了一种包括多个氮化物半导体层的氮化物半导体发光器件，其包括衬底和沉积在衬底上的有源层，其中衬底设置有突起，以使有源层中产生的光发射出 发光器件和每个突起具有彼此不平行的第一散射面和第二散射面。

公开(公告)号：US07622742B2

公开(公告)日：2009-11-24

申请号：US10562738

申请日：2004-07-02

申请人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

发明人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

IPC分类号： H01L27/15 ,  H01S5/00 ,  H01L21/311

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

摘要翻译： 本发明涉及具有高外量子效率的III族氮化物半导体发光器件，提供了一种III族氮化物化合物半导体发光器件，其包括通过电子和空穴的复合产生光并含有镓和氮的有源层， 在有源层生长之前外延生长的n型Al（x）ln（y）Ga（1-xy）N层，和n型Al（x）ln（y）Ga （1-xy）N层，其中n型Al（x）ln（y）Ga（1-xy）N层具有通过蚀刻暴露的表面，并且包括用于划线和断裂器件的区域，以及 用于与n型电极接触的区域，并且用于划线和断裂器件的区域的表面被粗糙化，从而可以增加发光器件的外部量子效率。

公开(公告)号：US20070114511A1

公开(公告)日：2007-05-24

申请号：US10562738

申请日：2004-07-02

申请人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

发明人： Chang-Tae Kim ,  Keuk Kim ,  Soo-Kun Jeon ,  Pil-Guk Jang ,  Jong-Won Kim

IPC分类号： H01L29/06

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： The present invention relates to a HI-nitride semiconductor light-emitting device having high external quantum efficiency, provides a HI-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is rough-ened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

摘要翻译： 本发明涉及具有高外部量子效率的III族氮化物半导体发光器件，其提供了包括通过电子和空穴的复合产生并含有镓和氮的光而产生光的有源层的III族氮化物化合物半导体发光器件， 在有源层生长之前外延生长的n型Al（x）ln（y）Ga（1-xy）N层，和n型Al（x）ln（y）Ga （1-y）N层，其中n型Al（x）ln（y）Ga（1-xy）N层具有通过蚀刻暴露的表面，并且包括用于划线和断开器件的区域和 用于与n型电极接触的区域，并且用于划线和断开器件的区域的表面粗糙，从而可以增加发光器件的外部量子效率。