公开(公告)号：US20100032689A1

公开(公告)日：2010-02-11

申请号：US12085150

申请日：2006-11-15

Applicant: Eun Hyun Park ,  Tae-Kyung Yoo

Inventor： Eun Hyun Park ,  Tae-Kyung Yoo

IPC: H01L33/00

CPC classification number: H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  Y10S257/918

Abstract: The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.

Abstract translation: 本发明公开了一种具有n型氮化物化合物半导体层的III族氮化物化合物半导体发光器件，在n型氮化物半导体层上生长的活性层，用于通过电子和空穴的复合产生光，以及p 型氮化物半导体层。 III族氮化物化合物半导体发光器件包括多个半导体层，包括在p型氮化物半导体层上生长的具有针孔结构的氮化物化合物半导体层。

公开(公告)号：US07601553B2

公开(公告)日：2009-10-13

申请号：US10563269

申请日：2004-07-16

Applicant: Tae-Kyung Yoo ,  Joong-Seo Park ,  Chang-Tae Kim

Inventor： Tae-Kyung Yoo ,  Joong-Seo Park ,  Chang-Tae Kim

IPC: H01L21/00

CPC classification number: H01L33/42 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/32341 ,  H01S2304/04

Abstract: The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semi-conductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.

Abstract translation: 本发明涉及一种氮化物半导体发光器件，其包括多个氮化物半导体层，其具有使用氮前体氨与肼基材料一起形成的p型氮化物半导体，肼基材料在热分解时产生与基团相结合的基团 氢自由基以消除氢根，从而不需要随后的用于除去氢的退火工艺，并防止活性层由于随后的退火工艺而被热损伤。

公开(公告)号：US20090014751A1

公开(公告)日：2009-01-15

申请号：US11795995

申请日：2005-10-06

Applicant: Chang-Tae Kim ,  Keuk Kim ,  Tae Kyung Yoo

Inventor： Chang-Tae Kim ,  Keuk Kim ,  Tae Kyung Yoo

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/22

Abstract: Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.

Abstract translation: 本文公开了一种包括多个氮化物半导体层的氮化物半导体发光器件，其包括衬底和沉积在衬底上的有源层，其中衬底设置有突起，以使有源层中产生的光发射出 发光器件和每个突起具有彼此不平行的第一散射面和第二散射面。

公开(公告)号：US20060118914A1

公开(公告)日：2006-06-08

申请号：US10559256

申请日：2004-06-03

Applicant: Tae-Kyung Yoo

Inventor： Tae-Kyung Yoo

IPC: H01L29/20

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/882 ,  H01L33/06

Abstract: The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P++—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer and a N++—Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

Abstract translation: 本发明提供具有低隧穿势垒的III族氮化物隧道结结构，其中Si层或III-V族化合物半导体In（a）Ga（b）Al（c）As（d）[N ] P（e）（0 <= a <= 1,0,0 <= b <= 1,0 <= c <= 1,0 <= d <= 1，0 <= e <= 1） 带隙比Al（x）Ga（y）In（z）N（0 <= x <=1,0,0≤y≤1,0<= z <= 1）的带隙，并且可以掺杂高 基于P +++（x）Ga（y）In（z）N（0≤x≤1,0<= y <1）将p的浓度插入到隧穿结中， = 1，0 <= z <= 1）层和平均值-Al（x）Ga（y）In（z）N（0≤x≤1,0<= y <= 1，0 <= z <= 1）层。 该隧道结结构对于制造高度可靠的超高速光电子器件将是有用的。

公开(公告)号：US06469313B2

公开(公告)日：2002-10-22

申请号：US10026809

申请日：2001-12-27

Applicant: Wook Kim ,  Tae Kyung Yoo

Inventor： Wook Kim ,  Tae Kyung Yoo

IPC: H01L2906

CPC classification number: H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

Abstract: A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second condcutive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

Abstract translation: 一种半导体光学器件及其制造方法。 半导体光学器件包括衬底，形成在衬底上的第一导电类型的半导体电极层，并且具有形成在其中所需深度的沟槽;第一导电类型的半导体层由沟槽的侧壁形成直到 在槽周边的第一导电类型的半导体电极层的一部分，第一导电类型的包覆层，第一导电类型的有源层，第二固化型的包覆层和半导体电极层 顺序地形成在第一导电类型的半导体层上的第二导电类型以及分别形成在第一和第二导电类型的半导体电极层上的第一和第二导电类型的电极。

公开(公告)号：US07863178B2

公开(公告)日：2011-01-04

申请号：US10542485

申请日：2004-08-21

Applicant: Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

Inventor： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

IPC: H01L21/3205

CPC classification number: H01L33/007 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

Abstract: The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

Abstract translation: 本发明涉及一种通过新的p型AlGaInN：Mg生长方法制造的AlGaInN基光学器件及其制造方法，包括使用NH 3和肼基源生长的p型氮化物半导体层作为 氮前体，因此不需要附加的用于提取氢的退火方法，因此该方法简单，并且可以防止活性层被随后的退火热损伤。

公开(公告)号：US07244968B2

公开(公告)日：2007-07-17

申请号：US10559256

申请日：2004-06-03

Applicant: Tae-Kyung Yoo

Inventor： Tae-Kyung Yoo

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/882 ,  H01L33/06

Abstract: The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦1, 0≦e≦1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P++-Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer and a N++-Al(x)Ga(y)In(z)N (0≦x≦1, 0≦y≦1, 0≦z≦1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.

Abstract translation: 本发明提供具有低隧穿势垒的III族氮化物隧道结结构，其中Si层或III-V族化合物半导体In（a）Ga（b）Al（c）As（d）[N ] P（e）（0 <= a <= 1,0,0 <= b <= 1,0 <= c <= 1,0 <= d <= 1，0 <= e <= 1） 带隙比Al（x）Ga（y）In（z）N（0 <= x <=1,0,0≤y≤1,0<= z <= 1）的带隙，并且可以掺杂高 基于P +++（x）Ga（y）In（z）N（0≤x≤1,0<= y <1）将p的浓度插入到隧穿结中， = 1，0 <= z <= 1）层和平均值-Al（x）Ga（y）In（z）N（0≤x≤1,0<= y <= 1，0 <= z <= 1）层。 该隧道结结构对于制造高度可靠的超高速光电子器件将是有用的。

公开(公告)号：US20070001179A1

公开(公告)日：2007-01-04

申请号：US10544328

申请日：2005-06-28

Applicant: Tae-Kyung Yoo ,  Eun Park

Inventor： Tae-Kyung Yoo ,  Eun Park

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) of the hexagonal structure and SixCyNz(x≧0, y≧0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x≧0, y≧0, x+y>0, z>0) material.

Abstract translation: 本发明涉及一种III族氮化物半导体发光器件，其中单层或多层由Si x Si x N z N z （x> = 0，y> = 0，x + y> 0，z> 0）插入到有源层中或下面，并且涉及一种技术，其中Al（x）Ga（y）In xy）N（0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）的六方结构和Si x x C y 根据Si = 0，y> = 0，x + y> 0，z> 0） （x> = 0，y> = 0，x + y> 0，z> 0）材料。

公开(公告)号：US06346431B1

公开(公告)日：2002-02-12

申请号：US09612917

申请日：2000-07-10

Applicant: Tae Kyung Yoo ,  Jae Eung Oh

Inventor： Tae Kyung Yoo ,  Jae Eung Oh

IPC: H01L2100

CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/09

Abstract: Quantum dot infrared detection device and method for fabricating the same, which is a new concept of detection device in which quantum dots in the quantum dot part having a stack of alternative quantum dots and separating layers are doped with impurities, so that the quantum dot part itself absorbs infrared ray and serves as a channel for transferring electrons generated by the infrared ray absorption, for enhancing device performance and a device uniformity, and simplifying a device structure and a device fabrication process.

Abstract translation: 量子点红外检测装置及其制造方法，其中检测装置的新概念是其中量子点部分中具有替代量子点和分离层的堆叠的量子点掺杂有杂质，使得量子点部分 本身吸收红外线并且用作用于传递由红外线吸收产生的电子的通道，用于增强器件性能和器件均匀性，并且简化了器件结构和器件制造工艺。

公开(公告)号：US06337223B1

公开(公告)日：2002-01-08

申请号：US09351439

申请日：1999-07-12

Applicant: Wook Kim ,  Tae Kyung Yoo

Inventor： Wook Kim ,  Tae Kyung Yoo

IPC: H01L2120

CPC classification number: H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

Abstract: A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second conductive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.