公开(公告)号：US09620645B1

公开(公告)日：2017-04-11

申请号：US14871361

申请日：2015-09-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd

发明人： Cheng-Chieh Lai ,  Kuang-Hsin Chen ,  Yung-Chun Wu ,  Mu-Shih Yeh

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/161 ,  H01L29/04 ,  H01L29/66 ,  H01L21/3065

CPC分类号： H01L21/28114 ,  H01L21/3065 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

摘要： A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an oxide layer formed over a substrate and a fin structure formed over the oxide layer. The fin structure is made of a semiconductor layer, and the semiconductor layer includes a first portion, a second portion and a third portion. The second portion is between the first portion and the third portion. The first portion, the second portion and the third portion construct a U-shaped trench, and the second portion is below the U-shaped trench. The FinFET device structure further includes a gate structure formed in the U-shaped trench.

公开(公告)号：US10361085B2

公开(公告)日：2019-07-23

申请号：US15483158

申请日：2017-04-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng-Chieh Lai ,  Kuang-Hsin Chen ,  Yung-Chun Wu ,  Mu-Shih Yeh

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/84 ,  H01L27/12

摘要： A method for forming a semiconductor device structure is provided that includes forming an oxide layer over a substrate and forming a semiconductor layer over the oxide layer. The method includes patterning the semiconductor layer to form a fin structure over the oxide layer and removing a portion of the fin structure to form a U-shaped trench in the fin structure. The method also includes forming a gate structure on the U-shaped trench.