公开(公告)号：US20190288068A1

公开(公告)日：2019-09-19

申请号：US16433374

申请日：2019-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao Liu ,  Huicheng Chang ,  Chia-Cheng Chen ,  Liang-Yin Chen ,  Kuo-Ju Chen ,  Chun-Hung Wu ,  Chang-Maio Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L29/08 ,  H01L21/265 ,  H01L21/02 ,  H01L29/66 ,  H01L29/167 ,  H01L29/78 ,  H01L21/285

Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

公开(公告)号：US20210226008A1

公开(公告)日：2021-07-22

申请号：US17201041

申请日：2021-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao Liu ,  Huicheng Chang ,  Chia-Cheng Chen ,  Liang-Yin Chen ,  Kuo-Ju Chen ,  Chun-Hung Wu ,  Chang-Maio Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L29/08 ,  H01L29/167 ,  H01L29/78 ,  H01L21/02 ,  H01L21/285 ,  H01L29/66 ,  H01L21/265 ,  H01L29/417

Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

公开(公告)号：US10950694B2

公开(公告)日：2021-03-16

申请号：US16433374

申请日：2019-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao Liu ,  Huicheng Chang ,  Chia-Cheng Chen ,  Liang-Yin Chen ,  Kuo-Ju Chen ,  Chun-Hung Wu ,  Chang-Maio Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/167 ,  H01L21/02 ,  H01L21/285 ,  H01L29/66 ,  H01L21/265 ,  H01L29/417

Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.