公开(公告)号：US11003069B2

公开(公告)日：2021-05-11

申请号：US16866368

申请日：2020-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Yu ,  Chi-Lun Lu ,  Chih-Tsung Shih ,  Ching-Wei Shen ,  Jeng-Horng Chen

IPC: G03F1/24

Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.

公开(公告)号：US10061191B2

公开(公告)日：2018-08-28

申请号：US15169953

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Yu ,  Chi-Lun Lu ,  Chih-Tsung Shih ,  Ching-Wei Shen ,  Jeng-Horng Chen

IPC: G03F1/22 ,  G03F1/24 ,  H01L21/02 ,  H01L21/033

CPC classification number: G03F1/24 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0337

Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.

公开(公告)号：US09817307B2

公开(公告)日：2017-11-14

申请号：US15010856

申请日：2016-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao Yu ,  Ming-Yun Chen

IPC: G03F1/22 ,  G03F1/72 ,  G03F1/24 ,  G03F1/76 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/72 ,  G03F1/76 ,  G03F1/80

Abstract: Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

公开(公告)号：US20200264503A1

公开(公告)日：2020-08-20

申请号：US16866368

申请日：2020-05-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Yu ,  Chi-Lun Lu ,  Chih-Tsung Shih ,  Ching-Wei Shen ,  Jeng-Horng Chen

IPC: G03F1/24

Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.

公开(公告)号：US09250513B2

公开(公告)日：2016-02-02

申请号：US14019809

申请日：2013-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Yu ,  Ming-Yun Chen

IPC: G03F1/72 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/72 ,  G03F1/76 ,  G03F1/80

Abstract: Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

Abstract translation: EUV掩模的反射多层涂层或吸收层中的任何缺陷在将EUV掩模的图案转印到晶片上是有问题的，因为它们在晶片上产生集成电路图案的错误。 在这方面，根据本公开的各种实施例提供了制造EUV掩模的方法。 为了修复缺陷，根据各种实施例沉积充当布拉格反射器的柱状反射体，以局部补偿和修复缺陷。 根据本公开的实施例，可以补偿由于缺陷引起的反射损耗，并且恢复由于缺陷而导致的相位不同，从而形成期望的晶片印刷图像。

公开(公告)号：US20150072270A1

公开(公告)日：2015-03-12

申请号：US14019809

申请日：2013-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hao Yu ,  Ming-Yun Chen

IPC: G03F1/72 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/72 ,  G03F1/76 ,  G03F1/80

Abstract: Any defects in the reflective multilayer coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. To repair the defect, a columnar reflector, which acts as a Bragg reflector, is deposited according to various embodiments so as to locally compensate and repair the defect. According to the embodiments of the present disclosure, the reflective loss due to the defect can be compensated and recover the phase different due to the defect from, so as to form a desirable wafer printed image.

Abstract translation: EUV掩模的反射多层涂层或吸收层中的任何缺陷在将EUV掩模的图案转印到晶片上是有问题的，因为它们在晶片上产生集成电路图案的错误。 在这方面，根据本公开的各种实施例提供了制造EUV掩模的方法。 为了修复缺陷，根据各种实施例沉积充当布拉格反射器的柱状反射体，以局部补偿和修复缺陷。 根据本公开的实施例，可以补偿由于缺陷引起的反射损耗，并且恢复由于缺陷而导致的相位不同，从而形成期望的晶片印刷图像。