公开(公告)号：US11031279B2

公开(公告)日：2021-06-08

申请号：US15672123

申请日：2017-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Kai Sun ,  Yi-Wei Chiu ,  Hung Jui Chang ,  Chia-Ching Tsai

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/423 ,  H01L21/28 ,  H01L29/51 ,  H01L21/311

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having reduced trench loading effect. The present disclosure provides a novel multi-layer cap film incorporating one or more oxygen-based layers for reducing trench loading effects in semiconductor devices. The multi-layer cap film can be made of a metal hard mask layer and one or more oxygen-based layers. The metal hard mask layer can be formed of titanium nitride (TiN). The oxygen-based layer can be formed of tetraethyl orthosilicate (TEOS).