公开(公告)号：US20240332354A1

公开(公告)日：2024-10-03

申请号：US18191067

申请日：2023-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Neng Lin ,  Yu-Shih Wang ,  Chia-Ling Chung

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: A method of forming a semiconductor device includes: forming an opening in a dielectric layer to expose an underlying conductive feature; conformally forming a first protection layer and a second protection layer in the opening; performing an anisotropic etching to remove a first portion of the second protection layer from the bottom of the opening while keeping a second portion of the second protection layer along the sidewalls of the opening; after the anisotropic etching, performing an isotropic etching to remove, from the sidewalls of the opening, an upper portion and a lower portion of the first protection layer while keeping a middle portion of the first protection layer along the sidewalls of the opening; after the isotropic etching, performing an anneal to at least partially convert the second portion of the second protection layer into an oxide; and after the anneal, filling the opening with a conductive material.

公开(公告)号：US20220310785A1

公开(公告)日：2022-09-29

申请号：US17566316

申请日：2021-12-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hung Wu ,  Chia-Ling Chung ,  Su-Hao Liu ,  Liang-Yin Chen ,  Shun-Wu Lin ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/06 ,  H01L29/786 ,  H01L21/8234 ,  H01L21/425

Abstract: A method of forming a semiconductor device including performing an ion implantation on a substrate and etching the substrate and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a transistor on a first side of a substrate; performing an ion implantation on a second side of the substrate opposite the first side; after performing the ion implantation, etching the substrate to remove the substrate and form a first recess; and forming a dielectric layer in the first recess.

公开(公告)号：US20240387182A1

公开(公告)日：2024-11-21

申请号：US18787621

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ling Chung ,  Chun-Chih Cheng ,  Shun-Wu Lin ,  Ming-Hsi Yeh ,  Kuo-Bin Huang

IPC: H01L21/306 ,  H01L21/762 ,  H01L29/40 ,  H01L29/417

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A first semiconductor region of a first semiconductor material is formed over the substrate and adjacent a second semiconductor region of a second semiconductor material. The first and second semiconductor regions are crystalline. An etchant is selective to etch the first semiconductor region over the second semiconductor region. The entire first semiconductor region is implanted to form an amorphized semiconductor region. The amorphized semiconductor region is etched with the etchant using the second semiconductor region as a mask to remove the amorphized semiconductor region without removing the second semiconductor region.

公开(公告)号：US20240014043A1

公开(公告)日：2024-01-11

申请号：US18232546

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ling Chung ,  Chun-Chih Cheng ,  Shun-Wu Lin ,  Ming-Hsi Yeh ,  Kuo-Bin Huang

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66439

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A first semiconductor region of a first semiconductor material is formed over the substrate and adjacent a second semiconductor region of a second semiconductor material. The first and second semiconductor regions are crystalline. An etchant is selective to etch the first semiconductor region over the second semiconductor region. The entire first semiconductor region is implanted to form an amorphized semiconductor region. The amorphized semiconductor region is etched with the etchant using the second semiconductor region as a mask to remove the amorphized semiconductor region without removing the second semiconductor region.