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公开(公告)号：US20210091125A1
公开(公告)日：2021-03-25
申请号：US17106350
申请日：2020-11-30
发明人： Chien-Chang Huang , Chien Nan Tu , Ming-Chi Wu , Yu-Lung Yeh , Ji Heng Jiang
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/028 , H01L31/0236 , H01L31/102
摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
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公开(公告)号：US10553628B2
公开(公告)日：2020-02-04
申请号：US16127322
申请日：2018-09-11
发明人： Chien-Chang Huang , Chien Nan Tu , Ming-Chi Wu , Yu-Lung Yeh , Ji Heng Jiang
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/028 , H01L31/0236 , H01L31/102
摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
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公开(公告)号：US10438980B2
公开(公告)日：2019-10-08
申请号：US15609325
申请日：2017-05-31
发明人： Chien-Chang Huang , Chien Nan Tu , Ming-Chi Wu , Yu-Lung Yeh , Ji Heng Jiang
IPC分类号： H01L27/146 , H01L31/028 , H01L31/0352 , H01L31/0236 , H01L31/102
摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
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公开(公告)号：US20180350853A1
公开(公告)日：2018-12-06
申请号：US15609325
申请日：2017-05-31
发明人： Chien-Chang Huang , Chien Nan Tu , Ming-Chi Wu , Yu-Lung Yeh , Ji Heng Jiang
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/028 , H01L31/0288
CPC分类号： H01L27/1461 , H01L27/14607 , H01L27/14621 , H01L27/14627 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L31/02363 , H01L31/0284 , H01L31/03529 , H01L31/102
摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
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公开(公告)号：US10157944B2
公开(公告)日：2018-12-18
申请号：US15586200
申请日：2017-05-03
IPC分类号： H01L27/00 , H01L27/146
摘要： A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.
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公开(公告)号：US11177302B2
公开(公告)日：2021-11-16
申请号：US16219492
申请日：2018-12-13
IPC分类号： H01L27/146
摘要： A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.
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公开(公告)号：US20190027517A1
公开(公告)日：2019-01-24
申请号：US16127322
申请日：2018-09-11
发明人： Chien-Chang Huang , Chien Nan Tu , Ming-Chi Wu , Yu-Lung Yeh , Ji Heng Jiang
IPC分类号： H01L27/146 , H01L31/028 , H01L31/0288 , H01L31/0352 , H01L31/103 , H01L31/109
摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
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公开(公告)号：US10164141B2
公开(公告)日：2018-12-25
申请号：US14332124
申请日：2014-07-15
发明人： Chien-Nan Tu , Yu-Lung Yeh , Hsing-Chih Lin , Chien-Chang Huang
IPC分类号： H01L21/00 , H01L21/76 , H01L31/18 , H01L31/101 , H01L27/146
摘要： A semiconductor device includes a carrier wafer, a device layer, a first semiconductor layer and a second semiconductor layer. The device layer is disposed on the carrier wafer. The first semiconductor layer is disposed on the device layer, and has a first side face and a second side face opposite to the first side face, in which the first side face is adjacent to the device layer. The second semiconductor layer is disposed on the first semiconductor layer, and has a third side face and a fourth side face opposite to the third side face, in which the fourth side face of the second semiconductor layer is adjacent to the second side face of the first semiconductor layer, and the second semiconductor layer is implanted and annealed.
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公开(公告)号：US10157946B2
公开(公告)日：2018-12-18
申请号：US15796693
申请日：2017-10-27
IPC分类号： H01L27/146
摘要： A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.
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公开(公告)号：US09818779B2
公开(公告)日：2017-11-14
申请号：US14460051
申请日：2014-08-14
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14645 , H01L27/14685 , H01L27/14689
摘要： A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.
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