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Patent Agency Ranking
1.发明授权公开(公告)号：US09564896B2
公开(公告)日：2017-02-07
申请号：US14296042
申请日：2014-06-04
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jerry Chang-Jui Kao , Chien-Ju Chao , Chin-Shen Lin , Nitesh Katta , Kuo-Nan Yang , Chung-Hsing Wang
CPC classification number: H03K19/0013 , H02M3/155 , H02M3/156 , H02M3/157 , H02M2001/0012
Abstract: A circuit is disclosed that includes a plurality of voltage control circuits and a control module. Each of the voltage control circuits is controlled by a control signal. The control module is configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data and second predetermined data.
Abstract translation: 公开了包括多个电压控制电路和控制模块的电路。 每个电压控制电路由控制信号控制。 控制模块被配置为产生控制信号并且根据电压控制电路的当前处理转角条件和第一预定数据和第二预定数据中的至少一个来确定控制信号的电压电平或脉冲宽度。
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公开(公告)号：US09152751B2
公开(公告)日：2015-10-06
申请号：US14267537
申请日：2014-05-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chin-Shen Lin , Jerry Chang-Jui Kao , Nitesh Katta , Chou-Kun Lin , Yi-Chuin Tsai , Chien-Ju Chao , Kuo-Nan Yang
IPC: G06F17/50
CPC classification number: G06F17/5045 , G06F17/5077 , G06F2217/76 , G06F2217/78 , H01L23/5286 , H01L2924/0002 , H01L2924/00
Abstract: A method is disclosed that includes the operations outlined below. An effective current pulse width of a maximum peak is determined based on a waveform function of a current having multiple peaks within a waveform period in a metal segment of a metal line in at least one design file of a semiconductor device to compute a duty ratio between the effective current pulse width and the waveform period. A maximum direct current limit of the metal segment is determined according to physical characteristics of the metal segment. An alternating current electromigration (AC EM) current limit is determined according to a ratio between the maximum direct current limit and a function of the duty ratio. The metal segment is included with the physical characteristics in the at least one design file when the maximum peak of the current does not exceed the AC EM current limit.
Abstract translation: 公开了一种包括以下概述的操作的方法。 基于在半导体器件的至少一个设计文件中的金属线的金属部分的波形周期内具有多个峰值的电流的波形函数来确定最大峰值的有效电流脉冲宽度，以计算半导体器件的至少一个设计文件中的占空比 有效电流脉冲宽度和波形周期。 根据金属段的物理特性确定金属段的最大直流极限。 根据最大直流限制和占空比函数之间的比例来确定交流电流（AC EM）电流限制。 当电流的最大峰值不超过AC EM电流限制时，金属部分包括在至少一个设计文件中的物理特性。
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3.发明申请公开(公告)号：US20150091543A1
公开(公告)日：2015-04-02
申请号：US14296042
申请日：2014-06-04
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jerry Chang-Jui KAO , Chien-Ju Chao , Chin-Shen Lin , Nitesh Katta , Kuo-Nan Yang , Chung-Hsing Wang
IPC: H03K17/56
CPC classification number: H03K19/0013 , H02M3/155 , H02M3/156 , H02M3/157 , H02M2001/0012
Abstract: A circuit is disclosed that includes a plurality of voltage control circuits and a control module. Each of the voltage control circuits is controlled by a control signal. The control module is configured to generate the control signal and to determine a voltage level or a pulse width of the control signal in accordance with a current process corner condition of the voltage control circuits and at least one of first predetermined data and second predetermined data.
Abstract translation: 公开了包括多个电压控制电路和控制模块的电路。 每个电压控制电路由控制信号控制。 控制模块被配置为产生控制信号并且根据电压控制电路的当前处理转角条件和第一预定数据和第二预定数据中的至少一个来确定控制信号的电压电平或脉冲宽度。
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公开(公告)号：US20190006346A1
公开(公告)日：2019-01-03
申请号：US16125965
申请日：2018-09-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chien-Ju Chao , Chou-Kun Lin , Yi-Chuin Tsai , Yen-Hung Lin , Po-Hsiang Huang , Kuo-Nan Yang , Chung-Hsing Wang
IPC: H01L27/02 , H01L21/8234 , H01L23/528 , H01L27/06 , H01L21/768 , H01L23/50
Abstract: A device comprises a first interconnect structure over a first active device layer, a first power circuit in the first active device layer, a second active device layer over and in contact with the first interconnect structure, a first switch in the second active device layer, a second interconnect structure over and in contact with the second active device layer, a third active device layer over and in contact with the second interconnect structure, a second power circuit in the third active device layer and a third interconnect structure over and in contact with the third active device layer and connected to a power source, wherein the power source is configured to provide power to the first power circuit through the first switch.
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公开(公告)号：US20150095873A1
公开(公告)日：2015-04-02
申请号：US14267537
申请日：2014-05-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chin-Shen Lin , Jerry Chang-Jui Kao , Nitesh Katta , Chou-Kun Lin , Yi-Chuin Tsai , Chien-Ju Chao , Kuo-Nan Yang
IPC: G06F17/50
CPC classification number: G06F17/5045 , G06F17/5077 , G06F2217/76 , G06F2217/78 , H01L23/5286 , H01L2924/0002 , H01L2924/00
Abstract: A method is disclosed that includes the operations outlined below. An effective current pulse width of a maximum peak is determined based on a waveform function of a current having multiple peaks within a waveform period in a metal segment of a metal line in at least one design file of a semiconductor device to compute a duty ratio between the effective current pulse width and the waveform period. A maximum direct current limit of the metal segment is determined according to physical characteristics of the metal segment. An alternating current electromigration (AC EM) current limit is determined according to a ratio between the maximum direct current limit and a function of the duty ratio. The metal segment is included with the physical characteristics in the at least one design file when the maximum peak of the current does not exceed the AC EM current limit.
Abstract translation: 公开了一种包括以下概述的操作的方法。 基于在半导体器件的至少一个设计文件中的金属线的金属部分的波形周期内具有多个峰值的电流的波形函数来确定最大峰值的有效电流脉冲宽度，以计算半导体器件的至少一个设计文件中的占空比 有效电流脉冲宽度和波形周期。 根据金属段的物理特性确定金属段的最大直流极限。 根据最大直流限制和占空比函数之间的比例来确定交流电流（AC EM）电流限制。 当电流的最大峰值不超过AC EM电流限制时，金属部分包括在至少一个设计文件中的物理特性。
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