公开(公告)号：US09405883B2

公开(公告)日：2016-08-02

申请号：US14857212

申请日：2015-09-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Shen Lin ,  Jerry Chang-Jui Kao ,  Nitesh Katta ,  Chou-Kun Lin ,  Yi-Chuin Tsai ,  Chi-Yeh Yu ,  Kuo-Nan Yang

IPC: G06F17/50 ,  H01L23/522 ,  H01L23/528

CPC classification number: G06F17/5081 ,  G06F17/5077 ,  G06F2217/76 ,  G06F2217/78 ,  G06F2217/82 ,  H01L23/5226 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is disclosed that includes the operations outlined below. A first criteria is determined to be met when directions of a first current and a second current around a first end and a second end of a metal segment respectively are opposite, in which the metal segment is a part of a power rail in at least one design file of a semiconductor device and is enclosed by only two terminal via arrays. A second criteria is determined to be met when a length of the metal segment is not larger than a electromigration critical length. The metal segment is included in the semiconductor device with a first current density limit depending on the length of the metal segment when the first and the second criteria are met.

公开(公告)号：US09152751B2

公开(公告)日：2015-10-06

申请号：US14267537

申请日：2014-05-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Shen Lin ,  Jerry Chang-Jui Kao ,  Nitesh Katta ,  Chou-Kun Lin ,  Yi-Chuin Tsai ,  Chien-Ju Chao ,  Kuo-Nan Yang

IPC: G06F17/50

CPC classification number: G06F17/5045 ,  G06F17/5077 ,  G06F2217/76 ,  G06F2217/78 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is disclosed that includes the operations outlined below. An effective current pulse width of a maximum peak is determined based on a waveform function of a current having multiple peaks within a waveform period in a metal segment of a metal line in at least one design file of a semiconductor device to compute a duty ratio between the effective current pulse width and the waveform period. A maximum direct current limit of the metal segment is determined according to physical characteristics of the metal segment. An alternating current electromigration (AC EM) current limit is determined according to a ratio between the maximum direct current limit and a function of the duty ratio. The metal segment is included with the physical characteristics in the at least one design file when the maximum peak of the current does not exceed the AC EM current limit.

Abstract translation: 公开了一种包括以下概述的操作的方法。 基于在半导体器件的至少一个设计文件中的金属线的金属部分的波形周期内具有多个峰值的电流的波形函数来确定最大峰值的有效电流脉冲宽度，以计算半导体器件的至少一个设计文件中的占空比 有效电流脉冲宽度和波形周期。 根据金属段的物理特性确定金属段的最大直流极限。 根据最大直流限制和占空比函数之间的比例来确定交流电流（AC EM）电流限制。 当电流的最大峰值不超过AC EM电流限制时，金属部分包括在至少一个设计文件中的物理特性。

公开(公告)号：US20190006346A1

公开(公告)日：2019-01-03

申请号：US16125965

申请日：2018-09-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Ju Chao ,  Chou-Kun Lin ,  Yi-Chuin Tsai ,  Yen-Hung Lin ,  Po-Hsiang Huang ,  Kuo-Nan Yang ,  Chung-Hsing Wang

IPC: H01L27/02 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/06 ,  H01L21/768 ,  H01L23/50

Abstract: A device comprises a first interconnect structure over a first active device layer, a first power circuit in the first active device layer, a second active device layer over and in contact with the first interconnect structure, a first switch in the second active device layer, a second interconnect structure over and in contact with the second active device layer, a third active device layer over and in contact with the second interconnect structure, a second power circuit in the third active device layer and a third interconnect structure over and in contact with the third active device layer and connected to a power source, wherein the power source is configured to provide power to the first power circuit through the first switch.

公开(公告)号：US09165882B2

公开(公告)日：2015-10-20

申请号：US14098435

申请日：2013-12-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Shen Lin ,  Jerry Chang-Jui Kao ,  Nitesh Katta ,  Chou-Kun Lin ,  Yi-Chuin Tsai ,  Chi-Yeh Yu ,  Kuo-Nan Yang

IPC: G06F9/455 ,  G06F17/50 ,  H01L23/522

CPC classification number: G06F17/5081 ,  G06F17/5077 ,  G06F2217/76 ,  G06F2217/78 ,  G06F2217/82 ,  H01L23/5226 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is disclosed that includes the operations outlined below. A first criteria is determined to be met when directions of a first current and a second current around a first end and a second end of a metal segment respectively are opposite, in which the metal segment is a part of a power rail in at least one design file of a semiconductor device and is enclosed by only two terminal via arrays. A second criteria is determined to be met when a length of the metal segment is not larger than a electromigration critical length. The metal segment is included in the semiconductor device with a first current density limit depending on the length of the metal segment when the first and the second criteria are met.

Abstract translation: 公开了一种包括以下概述的操作的方法。 当金属片段的第一端和第二端周围的第一电流和第二电流的方向分别相反时，第一标准被确定为满足，其中金属片段是至少一个中的电源轨的一部分 半导体器件的设计文件，仅由两个端子通孔阵列封装。 当金属段的长度不大于电迁移临界长度时，确定满足第二标准。 当符合第一和第二标准时，金属段被包括在半导体器件中，具有取决于金属段的长度的第一电流密度极限。

公开(公告)号：US20150095873A1

公开(公告)日：2015-04-02

申请号：US14267537

申请日：2014-05-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Shen Lin ,  Jerry Chang-Jui Kao ,  Nitesh Katta ,  Chou-Kun Lin ,  Yi-Chuin Tsai ,  Chien-Ju Chao ,  Kuo-Nan Yang

IPC: G06F17/50

CPC classification number: G06F17/5045 ,  G06F17/5077 ,  G06F2217/76 ,  G06F2217/78 ,  H01L23/5286 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is disclosed that includes the operations outlined below. An effective current pulse width of a maximum peak is determined based on a waveform function of a current having multiple peaks within a waveform period in a metal segment of a metal line in at least one design file of a semiconductor device to compute a duty ratio between the effective current pulse width and the waveform period. A maximum direct current limit of the metal segment is determined according to physical characteristics of the metal segment. An alternating current electromigration (AC EM) current limit is determined according to a ratio between the maximum direct current limit and a function of the duty ratio. The metal segment is included with the physical characteristics in the at least one design file when the maximum peak of the current does not exceed the AC EM current limit.

Abstract translation: 公开了一种包括以下概述的操作的方法。 基于在半导体器件的至少一个设计文件中的金属线的金属部分的波形周期内具有多个峰值的电流的波形函数来确定最大峰值的有效电流脉冲宽度，以计算半导体器件的至少一个设计文件中的占空比 有效电流脉冲宽度和波形周期。 根据金属段的物理特性确定金属段的最大直流极限。 根据最大直流限制和占空比函数之间的比例来确定交流电流（AC EM）电流限制。 当电流的最大峰值不超过AC EM电流限制时，金属部分包括在至少一个设计文件中的物理特性。