公开(公告)号：US10184912B2

公开(公告)日：2019-01-22

申请号：US15958053

申请日：2018-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Yi-Shao Liu ,  Fei-Lung Lai ,  Wei-Cheng Lin ,  Ta-Chuan Liao ,  Chien-Kuo Yang

IPC: G01N27/414

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

公开(公告)号：US20180238827A1

公开(公告)日：2018-08-23

申请号：US15958053

申请日：2018-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen CHENG ,  Yi-Shao Liu ,  Fei-Lung Lai ,  Wei-Cheng Lin ,  Ta-Chuan Liao ,  Chien-Kuo Yang

IPC: G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

公开(公告)号：US10509008B2

公开(公告)日：2019-12-17

申请号：US14700133

申请日：2015-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ta-Chuan Liao ,  Chien-Kuo Yang ,  Yi-Shao Liu ,  Tung-Tsun Chen ,  Chan-Ching Lin ,  Jui-Cheng Huang ,  Felix Ying-Kit Tsui ,  Jing-Hwang Yang

IPC: G01N27/414

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

公开(公告)号：US11828722B2

公开(公告)日：2023-11-28

申请号：US16716196

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chuan Liao ,  Chien-Kuo Yang ,  Yi-Shao Liu ,  Tung-Tsun Chen ,  Chan-Ching Lin ,  Jui-Cheng Huang ,  Felix Ying-Kit Tsui ,  Jing-Hwang Yang

IPC: G01N27/414

CPC classification number: G01N27/4145

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.