公开(公告)号：US11107630B2

公开(公告)日：2021-08-31

申请号：US16417797

申请日：2019-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Anderson Lin ,  Chun-Ren Cheng ,  Chi-Yuan Shih ,  Shih-Fen Huang ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Fu-Chun Huang ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01G4/012 ,  H01G4/228 ,  H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01G4/12 ,  H01L41/113 ,  H01L41/083 ,  H01L41/047

Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.

公开(公告)号：US20180172627A1

公开(公告)日：2018-06-21

申请号：US15386545

申请日：2016-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Ching-Hui Lin

IPC: G01N27/414 ,  H01L23/482

CPC classification number: G01N27/4145 ,  G01N27/4146 ,  H01L23/4825 ,  H01L29/786

Abstract: A semiconductor device including a biosensor with an on-chip reference electrode embedded within the semiconductor device, and associated manufacturing methods are provided. In some embodiments, a pair of source/drain regions is disposed within a device substrate and separated by a channel region. An isolation layer is disposed over the device substrate. A sensing well is disposed from an upper surface of the isolation layer overlying the channel region. A bio-sensing film is disposed along the upper surface of the isolation layer and extended along sidewall and lower surfaces of the sensing well. A reference electrode is disposed vertically between the bio-sensing film and the isolation layer.

公开(公告)号：US11624726B2

公开(公告)日：2023-04-11

申请号：US17208596

申请日：2021-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  G01N27/30 ,  B01L3/00

Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.

公开(公告)号：US11119101B2

公开(公告)日：2021-09-14

申请号：US15406066

申请日：2017-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng Huang ,  Chin-Hua Wen ,  Tung-Tsun Chen ,  Cheng-Hsiang Hsieh ,  Yu-Jie Huang ,  Ching-Hui Lin

IPC: G01N33/543 ,  G01N27/416 ,  G01N27/414 ,  B01L3/00 ,  C12Q1/6837

Abstract: A fluidic cartridge and methods of operation are described. The fluidic cartridge includes a substrate having a plurality of contact pads designed to electrically couple with an analyzer, a semiconductor chip having a sensor array, and a reference electrode. The fluidic cartridge includes a first fluidic channel having an inlet and coupled to a second fluidic channel, the second fluidic channel being aligned such that the sensor array and the reference electrode are disposed within the second fluidic channel. A first plug is disposed at the first inlet. The first plug includes a compliant material configured to be punctured by a capillary without leaking fluid through the first plug.

公开(公告)号：US20200006469A1

公开(公告)日：2020-01-02

申请号：US16410259

申请日：2019-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Yuan Shih ,  Kai-Fung Chang ,  Shih-Fen Huang ,  Wen-Chuan Tai ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Anderson Lin ,  Fu-Chun Huang ,  Chun-Ren Cheng ,  Ivan Hua-Shu Wu ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01L49/02 ,  H01L23/58

Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.

公开(公告)号：US20200098517A1

公开(公告)日：2020-03-26

申请号：US16417797

申请日：2019-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Anderson Lin ,  Chun-Ren Cheng ,  Chi-Yuan Shih ,  Shih-Fen Huang ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Fu-Chun Huang ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01G4/012 ,  H01G4/228 ,  H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01G4/12

Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.

公开(公告)号：US10522400B2

公开(公告)日：2019-12-31

申请号：US15216853

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Ching-Hui Lin

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786 ,  G01N27/414 ,  H01L23/34 ,  H01L27/12

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.

公开(公告)号：US10101295B2

公开(公告)日：2018-10-16

申请号：US15386545

申请日：2016-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Ching-Hui Lin

IPC: G01N27/403 ,  G01N27/414 ,  H01L23/482 ,  H01L29/786

Abstract: A semiconductor device including a biosensor with an on-chip reference electrode embedded within the semiconductor device, and associated manufacturing methods are provided. In some embodiments, a pair of source/drain regions is disposed within a device substrate and separated by a channel region. An isolation layer is disposed over the device substrate. A sensing well is disposed from an upper surface of the isolation layer overlying the channel region. A bio-sensing film is disposed along the upper surface of the isolation layer and extended along sidewall and lower surfaces of the sensing well. A reference electrode is disposed vertically between the bio-sensing film and the isolation layer.

公开(公告)号：US11588095B2

公开(公告)日：2023-02-21

申请号：US16421810

申请日：2019-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Fu-Chun Huang

IPC: H01L41/113 ,  G01N27/414 ,  H01L41/33 ,  H01L41/053 ,  H01L41/27 ,  H01L41/047

Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

公开(公告)号：US11320395B2

公开(公告)日：2022-05-03

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234 ,  H01L23/29

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.