公开(公告)号：US20180284595A1

公开(公告)日：2018-10-04

申请号：US15475137

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hung Lai ,  Chih-Chung Huang ,  Chih-Chiang Tu ,  Chung-Hung Lin ,  Chi-Ming Tsai ,  Ming-Ho Tsai

IPC: G03F1/22 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/36 ,  G03F7/7015 ,  G03F7/70441

Abstract: A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 μm2 to 60000 μm2. The second pattern has an area of 0.16 μm2 to 60000 μm2. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.

公开(公告)号：US10274817B2

公开(公告)日：2019-04-30

申请号：US15475137

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hung Lai ,  Chih-Chung Huang ,  Chih-Chiang Tu ,  Chung-Hung Lin ,  Chi-Ming Tsai ,  Ming-Ho Tsai

IPC: G03F1/22 ,  G03F1/36 ,  G03F7/20

Abstract: A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 μm2 to 60000 μm2. The second pattern has an area of 0.16 μm2 to 60000 μm2. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.