公开(公告)号：US10274817B2

公开(公告)日：2019-04-30

申请号：US15475137

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hung Lai ,  Chih-Chung Huang ,  Chih-Chiang Tu ,  Chung-Hung Lin ,  Chi-Ming Tsai ,  Ming-Ho Tsai

IPC: G03F1/22 ,  G03F1/36 ,  G03F7/20

Abstract: A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 μm2 to 60000 μm2. The second pattern has an area of 0.16 μm2 to 60000 μm2. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.

公开(公告)号：US09367661B2

公开(公告)日：2016-06-14

申请号：US14477285

申请日：2014-09-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Guei Jou ,  Yi-Chiuan Luo ,  Chih-Chung Huang ,  Chi-Ming Tsai ,  Chih-Chiang Tu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method of preparing mask data, the method begins with performing a logic operation to a design layout, and an optical proximity correction (OPC) is performed to the design layout to form an OPC feature. The OPC feature has a first jog and a second jog on a line, and the first jog is larger than the second jog in width. The OPC feature is resized to form a resized first jog and a resized second jog on the line if a width ratio of the first jog to the second jog being smaller than a predetermined value.

Abstract translation: 一种制备掩模数据的方法，该方法开始于对设计布局进行逻辑运算，并且对设计布局执行光学邻近校正（OPC）以形成OPC特征。 OPC特征在线上具有第一点动和第二点动，并且第一点动大于第二点动宽度。 如果第一点动到第二点动的宽度比小于预定值，则OPC特征被调整大小以形成调整大小的第一点动和在线上的调整大小的第二点动。

公开(公告)号：US20160070843A1

公开(公告)日：2016-03-10

申请号：US14477285

申请日：2014-09-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Guei JOU ,  Yi-Chiuan Luo ,  Chih-Chung Huang ,  Chi-Ming Tsai ,  Chih-Chiang Tu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method of preparing mask data, the method begins with performing a logic operation to a design layout, and an optical proximity correction (OPC) is performed to the design layout to form an OPC feature. The OPC feature has a first jog and a second jog on a line, and the first jog is larger than the second jog in width. The OPC feature is resized to form a resized first jog and a resized second jog on the line if a width ratio of the first jog to the second jog being smaller than a predetermined value.

Abstract translation: 一种制备掩模数据的方法，该方法开始于对设计布局进行逻辑运算，并且对设计布局执行光学邻近校正（OPC）以形成OPC特征。 OPC特征在线上具有第一点动和第二点动，并且第一点动大于第二点动宽度。 如果第一点动到第二点动的宽度比小于预定值，则OPC特征被调整大小以形成调整大小的第一点动和在线上的调整大小的第二点动。

公开(公告)号：US20180284595A1

公开(公告)日：2018-10-04

申请号：US15475137

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hung Lai ,  Chih-Chung Huang ,  Chih-Chiang Tu ,  Chung-Hung Lin ,  Chi-Ming Tsai ,  Ming-Ho Tsai

IPC: G03F1/22 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/36 ,  G03F7/7015 ,  G03F7/70441

Abstract: A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 μm2 to 60000 μm2. The second pattern has an area of 0.16 μm2 to 60000 μm2. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.