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    System and method for performing spin dry etching
    4.
    发明授权
    System and method for performing spin dry etching 有权

    公开(公告)号：US10276426B2

    公开(公告)日：2019-04-30

    申请号：US15204761

    申请日：2016-07-07

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen

    IPC: H01L21/687 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32

    Abstract: A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.

    Mask overlay control
    6.
    发明授权
    Mask overlay control 有权
    面膜叠加控制

    公开(公告)号：US09017903B2

    公开(公告)日：2015-04-28

    申请号：US13947180

    申请日：2013-07-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Chien-Chih Chen ,  Chen-Shao Hsu

    IPC: G03F1/22 ,  G03F1/24 ,  G03F1/26 ,  G03F1/70 ,  G03F1/82

    CPC classification number: G03F1/70 ,  G03F1/22 ,  G03F1/24 ,  G03F1/26 ,  G03F1/82 ,  G03F7/70783

    Abstract: Some embodiments of the present disclosure relate to a method of patterning a workpiece with a mask, wherein a scale factor between a geometry of the mask and a corresponding target shape of the mask is determined. The scale factor results from thermal expansion of the mask and geometry due to heating of the mask during exposure to radiation by an electron beam (e-beam) in the mask manufacturing process. A number of radiation pulses necessary to dispose the geometry on the mask is determined. A scale factor for the mask is then determined from the number of pulses. The target shape is then generated on the mask by re-scaling the geometry according to the scale factor prior to mask manufacturing. This method compensates for thermal deformation due to e-beam heating to improve OVL variability in advanced technology nodes.

    Abstract translation: 本公开的一些实施例涉及用掩模图案化工件的方法，其中确定掩模的几何形状与掩模的对应目标形状之间的比例因子。 缩放因子是由掩模的热膨胀和几何形状引起的，这是由于在掩模制造过程中通过电子束（电子束）暴露于辐射期间掩模的加热。 确定将几何形状设置在掩模上所需的许多辐射脉冲。 然后根据脉冲数确定掩模的比例因子。 然后通过在掩模制造之前根据比例因子重新缩放几何形状，在掩模上生成目标形状。 该方法补偿了电子束加热引起的热变形，提高了先进技术节点的OVL变化。

    MASK OVERLAY CONTROL
    7.
    发明申请
    MASK OVERLAY CONTROL 有权
    掩蔽覆盖控制

    公开(公告)号：US20150024306A1

    公开(公告)日：2015-01-22

    申请号：US13947180

    申请日：2013-07-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Jong-Yuh Chang ,  Chien-Chih Chen ,  Chen-Shao Hsu

    IPC: G03F1/82

    CPC classification number: G03F1/70 ,  G03F1/22 ,  G03F1/24 ,  G03F1/26 ,  G03F1/82 ,  G03F7/70783

    Abstract: Some embodiments of the present disclosure relate to a method of patterning a workpiece with a mask, wherein a scale factor between a geometry of the mask and a corresponding target shape of the mask is determined. The scale factor results from thermal expansion of the mask and geometry due to heating of the mask during exposure to radiation by an electron beam (e-beam) in the mask manufacturing process. A number of radiation pulses necessary to dispose the geometry on the mask is determined. A scale factor for the mask is then determined from the number of pulses. The target shape is then generated on the mask by re-scaling the geometry according to the scale factor prior to mask manufacturing. This method compensates for thermal deformation due to e-beam heating to improve OVL variability in advanced technology nodes.

    Abstract translation: 本公开的一些实施例涉及用掩模图案化工件的方法，其中确定掩模的几何形状与掩模的对应目标形状之间的比例因子。 缩放因子是由掩模的热膨胀和几何形状引起的，这是由于在掩模制造过程中通过电子束（电子束）暴露于辐射期间掩模的加热。 确定将几何形状设置在掩模上所需的许多辐射脉冲。 然后根据脉冲数确定掩模的比例因子。 然后通过在掩模制造之前根据比例因子重新缩放几何形状，在掩模上生成目标形状。 该方法补偿了电子束加热引起的热变形，提高了先进技术节点的OVL变化。

    Photomask having a plurality of shielding layers
    10.
    发明授权
    Photomask having a plurality of shielding layers 有权

    公开(公告)号：US11099476B2

    公开(公告)日：2021-08-24

    申请号：US16879889

    申请日：2020-05-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Chiang Tu ,  Chun-Lang Chen

    IPC: G03F1/26 ,  G03F1/54

    Abstract: Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.

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