公开(公告)号：US11664442B2

公开(公告)日：2023-05-30

申请号：US17074265

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/6656 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/046 ,  H01L21/30617 ,  H01L21/823864 ,  H01L29/0847 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7833 ,  H01L21/823468 ,  H01L29/665

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US20210050431A1

公开(公告)日：2021-02-18

申请号：US17074265

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US20190157419A1

公开(公告)日：2019-05-23

申请号：US15891074

申请日：2018-02-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/04 ,  H01L21/02 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US10811519B2

公开(公告)日：2020-10-20

申请号：US16429144

申请日：2019-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US20190288087A1

公开(公告)日：2019-09-19

申请号：US16429144

申请日：2019-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/78 ,  H01L29/08 ,  H01L21/306 ,  H01L21/04

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US10312348B1

公开(公告)日：2019-06-04

申请号：US15891074

申请日：2018-02-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.