公开(公告)号：US10156478B2

公开(公告)日：2018-12-18

申请号：US14850878

申请日：2015-09-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chang Liu ,  Tzy-Kuang Lee

IPC: G01J5/00 ,  G01J5/02 ,  H01L21/673 ,  H01L21/677 ,  H01L21/67

Abstract: A temperature monitor system for semiconductor substrates in a front opening unified pod (FOUP) includes a temperature detector and a programmable controller. The temperature detector is in the FOUP and configured to obtain temperature data of semiconductor substrates. The programmable controller is coupled to the temperature detector and configured to control operation of the temperature detector.

公开(公告)号：US10811519B2

公开(公告)日：2020-10-20

申请号：US16429144

申请日：2019-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US20190288087A1

公开(公告)日：2019-09-19

申请号：US16429144

申请日：2019-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/78 ,  H01L29/08 ,  H01L21/306 ,  H01L21/04

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US10312348B1

公开(公告)日：2019-06-04

申请号：US15891074

申请日：2018-02-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US11664442B2

公开(公告)日：2023-05-30

申请号：US17074265

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/6656 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/046 ,  H01L21/30617 ,  H01L21/823864 ,  H01L29/0847 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7833 ,  H01L21/823468 ,  H01L29/665

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US20210050431A1

公开(公告)日：2021-02-18

申请号：US17074265

申请日：2020-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

公开(公告)号：US20190157419A1

公开(公告)日：2019-05-23

申请号：US15891074

申请日：2018-02-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Chang Huang ,  Fu-Peng Lu ,  Chun-Chang Liu ,  Chen-Chiu Huang

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/04 ,  H01L21/02 ,  H01L21/306 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.