公开(公告)号：US20250169163A1

公开(公告)日：2025-05-22

申请号：US19030103

申请日：2025-01-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H10D84/80 ,  H01L21/033 ,  H01L21/768 ,  H10D1/68 ,  H10D64/01 ,  H10D84/01 ,  H10D84/03

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US20210091172A1

公开(公告)日：2021-03-25

申请号：US17114108

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L21/033

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US12243871B2

公开(公告)日：2025-03-04

申请号：US18171530

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L27/07 ,  H01L21/033 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66 ,  H01L49/02

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US20230207320A1

公开(公告)日：2023-06-29

申请号：US18171530

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L21/033 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/0337 ,  H01L21/76829 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823481 ,  H01L27/0733 ,  H01L28/60 ,  H01L29/66545

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US11587790B2

公开(公告)日：2023-02-21

申请号：US17114108

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L21/033 ,  H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US10861928B2

公开(公告)日：2020-12-08

申请号：US16183113

申请日：2018-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L21/033

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US20200091277A1

公开(公告)日：2020-03-19

申请号：US16183113

申请日：2018-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/033 ,  H01L29/66

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.