公开(公告)号：US20250169163A1

公开(公告)日：2025-05-22

申请号：US19030103

申请日：2025-01-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H10D84/80 ,  H01L21/033 ,  H01L21/768 ,  H10D1/68 ,  H10D64/01 ,  H10D84/01 ,  H10D84/03

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US12243871B2

公开(公告)日：2025-03-04

申请号：US18171530

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L27/07 ,  H01L21/033 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66 ,  H01L49/02

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US20210091172A1

公开(公告)日：2021-03-25

申请号：US17114108

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L21/033

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US20230207320A1

公开(公告)日：2023-06-29

申请号：US18171530

申请日：2023-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L21/033 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/0337 ,  H01L21/76829 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/823481 ,  H01L27/0733 ,  H01L28/60 ,  H01L29/66545

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US11587790B2

公开(公告)日：2023-02-21

申请号：US17114108

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L21/033 ,  H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US11362001B2

公开(公告)日：2022-06-14

申请号：US16911665

申请日：2020-06-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsiao-Han Liu ,  Chih-Hao Wang ,  Kuo-Cheng Chiang ,  Shi-Ning Ju ,  Kuan-Lun Cheng

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first fin structure, a second fin structure, a third fin structure, and a fourth fin structure formed over a substrate. The semiconductor structure further includes first nanostructures, second nanostructures, third nanostructures, and fourth nanostructures. The semiconductor structure further includes a first gate structure wrapping around the first nanostructures and the second nanostructures, and a second gate structure wrapping around the third nanostructures and the fourth nanostructures. In addition, a first lateral distance between the first fin structure and the second fin structure is shorter than a second lateral distance between the third fin structure and the fourth fin structure, and the first fin structure and the second fin structure are narrower than the third fin structure and the fourth fin structure.

公开(公告)号：US10861928B2

公开(公告)日：2020-12-08

申请号：US16183113

申请日：2018-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L21/033

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

公开(公告)号：US20200091277A1

公开(公告)日：2020-03-19

申请号：US16183113

申请日：2018-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Han Liu ,  Hoppy Lee ,  Chung-Yu Chiang ,  Po-Nien Chen ,  Chih-Yung Lin

IPC: H01L49/02 ,  H01L27/07 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/033 ,  H01L29/66

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.