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公开(公告)号：US20190140020A1
公开(公告)日：2019-05-09
申请号：US15875140
申请日：2018-01-19
发明人： Ji-Feng YING , Baohua NIU
摘要： A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array including a plurality of sensing cells and a controller. Each of the sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to access the first MRAM cells to detect the external magnetic field strength of the MRAM. The controller determines whether to stop the write operation of a plurality of memory cells of the MRAM according to the external magnetic field strength of the MRAM, and each of the memory cells includes a second MTJ device. The first MTJ device is smaller than the second MTJ device.
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公开(公告)号：US20210148695A1
公开(公告)日：2021-05-20
申请号：US17141089
申请日：2021-01-04
发明人： Ji-Feng YING , Baohua NIU , David Hung-I SU
IPC分类号： G01B11/06 , G03F7/20 , G01N21/84 , G01N21/95 , G01N21/956
摘要： A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.
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公开(公告)号：US20190145756A1
公开(公告)日：2019-05-16
申请号：US15908201
申请日：2018-02-28
发明人： Baohua NIU , Ji-Feng YING , David Hung-I SU
摘要： A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.
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公开(公告)号：US20210241809A1
公开(公告)日：2021-08-05
申请号：US17170633
申请日：2021-02-08
发明人： Ji-Feng YING , Jhong-Sheng WANG , Duen-Huei HOU
摘要： A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.
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公开(公告)号：US20200312393A1
公开(公告)日：2020-10-01
申请号：US16902134
申请日：2020-06-15
发明人： Ji-Feng YING , Jhong-Sheng WANG , Baohua NIU
IPC分类号： G11C11/16
摘要： A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current is applied to the first memory cell to determine whether a magnetic orientation of the first memory cell has changed in response to applying the optimum write current. A second write current is applied to the first memory cell when the magnetic orientation of the first memory cell has not changed. The second write current is different from the optimum write current. A second read current is applied to the first memory cell to determine whether the magnetic orientation of the first memory cell changed in response to applying the second write current.
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公开(公告)号：US20200152701A1
公开(公告)日：2020-05-14
申请号：US16743992
申请日：2020-01-15
发明人： Ji-Feng YING , Duen-Huei HOU
摘要： A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
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公开(公告)号：US20200286951A1
公开(公告)日：2020-09-10
申请号：US16882600
申请日：2020-05-25
发明人： Ji-Feng YING , Baohua NIU
摘要： A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.
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公开(公告)号：US20190146045A1
公开(公告)日：2019-05-16
申请号：US15905574
申请日：2018-02-26
发明人： Baohua NIU , Ji-Feng YING
CPC分类号： G01R33/26 , G01Q30/025 , G01Q60/08 , G01Q60/38 , G01Q60/52 , G01Q70/14 , G01R33/032 , G01R33/12 , G01R33/323
摘要： An apparatus for measuring a magnetic field strength is provided. The apparatus includes a stage on which a sample to be measured is placed, a cantilever having a tip, an optical system having a light source and a light receiver, and a microwave power source. The tip is a diamond tip having a nitrogen vacancy defect. The optical system is configured such that excitation light from the light source is focused at the diamond tip. The cantilever is configured as a coaxial microwave antenna through which microwaves from the microwave power source are supplied to the diamond tip.
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公开(公告)号：US20200058340A1
公开(公告)日：2020-02-20
申请号：US16428551
申请日：2019-05-31
发明人： Ji-Feng YING , Jhong-Sheng WANG , Duen-Huei HOU
摘要： A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.
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公开(公告)号：US20200020375A1
公开(公告)日：2020-01-16
申请号：US16377036
申请日：2019-04-05
发明人： Ji-Feng YING , Jhong-Sheng WANG , Baohua NIU
IPC分类号： G11C11/16
摘要： A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current is applied to the first memory cell to determine whether a magnetic orientation of the first memory cell has changed in response to applying the optimum write current. A second write current is applied to the first memory cell when the magnetic orientation of the first memory cell has not changed. The second write current is different from the optimum write current. A second read current is applied to the first memory cell to determine whether the magnetic orientation of the first memory cell changed in response to applying the second write current.
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