公开(公告)号：US20180315617A1

公开(公告)日：2018-11-01

申请号：US15726040

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Joy CHENG ,  Ching-Yu CHANG

IPC: H01L21/3213 ,  C08F12/08

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a metal complex including a radical generator, an organic core, and an organic solvent. By way of example, the organic core includes at least one cross-linker site. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

公开(公告)号：US20190146337A1

公开(公告)日：2019-05-16

申请号：US15938599

申请日：2018-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG ,  Joy CHENG

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/32 ,  H01L21/47

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 25 pKa>9.5; and a chelate.

公开(公告)号：US20190067002A1

公开(公告)日：2019-02-28

申请号：US16105934

申请日：2018-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chung SU ,  Joy CHENG ,  Ching-Yu CHANG

IPC: H01L21/027 ,  H01L21/033 ,  G03F7/16

Abstract: In a method of manufacturing a semiconductor device, a photo resist layer is formed over a substrate with underlying structures. The first photo resist layer is exposed to exposure radiation. The exposed first photo resist layer is developed with a developing solution. A planarization layer is formed over the developed photo resist layer. The underlying structures include concave portions, and a part of the concave portions is not filled by the developed first photo resist.

公开(公告)号：US20200135452A1

公开(公告)日：2020-04-30

申请号：US16731664

申请日：2019-12-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han KO ,  Joy CHENG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/266 ,  G03F7/038 ,  G03F7/20 ,  G03F7/40 ,  G03F7/09 ,  G03F7/039 ,  G03F7/38 ,  G03F7/26

Abstract: A method for performing a photolithography process is provided. The method includes forming a layer over a substrate, and exposing a portion of the layer to form an exposed region. The method also includes performing a baking process on the layer, so that voids are formed in the exposed region of the layer. The method further includes filling the void with a post treatment coating material, and the post treatment coating material is over the exposed region of the layer.

公开(公告)号：US20190164746A1

公开(公告)日：2019-05-30

申请号：US15905501

申请日：2018-02-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Ling Chang CHIEN ,  Chien-Chih CHEN ,  Chin-Hsiang LIN ,  Ching-Yu CHANG ,  Joy CHENG

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  C09D133/12 ,  C09D125/06 ,  C09D125/16

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

公开(公告)号：US20190146342A1

公开(公告)日：2019-05-16

申请号：US15994615

申请日：2018-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG ,  Joy CHENG

IPC: G03F7/038 ,  G03F7/38 ,  H01L21/027 ,  G03F7/20

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the photoresist layer to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having fluorocarbon pendant groups.

公开(公告)号：US20190080901A1

公开(公告)日：2019-03-14

申请号：US15906187

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han KO ,  Joy CHENG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/266 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40 ,  G03F7/09 ,  G03F7/039 ,  G03F7/038

Abstract: A method for performing a photolithography process is provided. The method includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed region and an unexposed region by performing an exposure process. The method includes performing a baking process on the resist layer, so that voids are formed in the exposed region of the resist layer. The method also includes removing the unexposed region of the resist layer to form a recess in the resist layer and filling a post treatment coating material in the recess and the void. The method further includes removing a portion of the post treatment coating material by performing a second develop process, and another portion of the post treatment coating material is left on surfaces of the exposed region of the resist layer to form a patterned resist layer.