公开(公告)号：US20230375940A1

公开(公告)日：2023-11-23

申请号：US17747939

申请日：2022-05-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shang-Chieh Chien ,  Hung-Wen Cho ,  Wei-Shin Cheng ,  Ming-Hsun Tsai ,  Jyun-Yan Chuang ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/702 ,  H01L21/027

摘要： A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.