公开(公告)号：US20250116932A1

公开(公告)日：2025-04-10

申请号：US18601835

申请日：2024-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Po YANG ,  Wei-Han LAI ,  Kuan-Hsin LO ,  Ching-Yu CHANG

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  C08F220/38 ,  G03F7/038

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer from a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound, a thiol-containing polymer comprising an aryl group and an acid labile group. The thiol group can crosslink the polymer via oxidative disulfide formation and/or thiol-ene/yne “click” reaction.

公开(公告)号：US20240369926A1

公开(公告)日：2024-11-07

申请号：US18310925

申请日：2023-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Po YANG ,  Ching-Yu CHANG ,  Kuan-Hsin LO ,  Wei-Han LAI

IPC: G03F7/038 ,  G03F7/20 ,  H01L21/311

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer including a crosslinking group and a photoactive compound.