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    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
    7.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权

    公开(公告)号：US20210397089A1

    公开(公告)日：2021-12-23

    申请号：US17147424

    申请日：2021-01-12

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Li-Po YANG ,  Wei-Han LAI ,  Ching-Yu CHANG

    IPC: G03F7/038 ,  G03F7/20 ,  G03F7/004 ,  G03F7/36 ,  G03F7/38 ,  G03F7/16 ,  G03F7/039 ,  C08F212/14 ,  C08F220/38

    Abstract: Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: A1, A2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A3 is C6-C14 aromatic, wherein A3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; Rf is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
    8.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权

    公开(公告)号：US20210364916A1

    公开(公告)日：2021-11-25

    申请号：US17090558

    申请日：2020-11-05

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Li-Po YANG ,  Ching-Yu CHANG

    IPC: G03F7/004 ,  G03F7/20 ,  G03F7/40 ,  C08F220/14 ,  C08F212/14 ,  G03F7/32 ,  G03F7/38

    Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The photoresist layer includes a photoresist composition including a photoactive compound and a polymer. The polymer has one or more of iodine or an iodo group attached to the polymer, and the polymer includes one or more monomer units having a crosslinker group, and the monomer units having a crosslinker group are one or more of: or the photoresist composition includes a photoactive compound, a polymer including an iodine or an iodo-group, and a crosslinker with two to six crosslinking groups.

    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210311388A1

    公开(公告)日：2021-10-07

    申请号：US17169206

    申请日：2021-02-05

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Wei-Han LAI ,  Li-Po YANG ,  Shang-Wern CHANG ,  Ching-Yu CHANG ,  Tzu-Yang LIN ,  Chin-Hsiang LIN

    IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

    Abstract: Manufacturing semiconductor device includes forming photoresist layer. Photoresist layer is selectively exposed to actinic radiation and developed to form pattern. Photoresist composition includes: iodine-containing sensitizer, photoactive compound, polymer. Iodine-containing sensitizer includes ammonium, phosphonium, or heterocyclic ammonium iodides, where X1, X2, X3, and X4 are independently direct bond, C6-C30 iodo-aryl group, C1-C30 iodo-alkyl group, C3-C30 iodo-cycloalkyl group, C1-C30 iodo-hydroxylalkyl group, C2-C30 iodo-alkoxy group, C3-C30 iodo-alkoxyl alkyl group, C1-C30 iodo-acetyl group, C2-C30 iodo-acetylalkyl group, C1-C30 iodo-carboxyl group, C2-C30 iodo-alky carboxyl group, and C4-C30 iodo-cycloalkyl carboxyl group; C3-C30 saturated or unsaturated iodo-hydrocarbon ring, or C3-C30 iodo-heterocyclic group; A1, A2, A3, A4 are independently acid labile group selected from C6-C15 iodo-aryl group, C4-C15 iodo-alkyl group, C4-C15 iodo-cycloalkyl group, C4-C15 iodo-hydroxylalkyl group, C4-C15 iodo-alkoxy group, and C4-C15 iodo-alkoxyl alkyl group.

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