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    UNDERLAYER OF MULTILAYER STRUCTURE AND METHODS OF USE THEREOF
    4.
    发明申请
    UNDERLAYER OF MULTILAYER STRUCTURE AND METHODS OF USE THEREOF 有权

    公开(公告)号：US20220392764A1

    公开(公告)日：2022-12-08

    申请号：US17481680

    申请日：2021-09-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Jing-Hong HUANG ,  Wei-Han LAI ,  Ching-Yu CHANG

    IPC: H01L21/027 ,  H01L21/3213

    Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.

    MATERIAL COMPOSITION AND PROCESS FOR SUBSTRATE MODIFICATION
    5.
    发明申请
    MATERIAL COMPOSITION AND PROCESS FOR SUBSTRATE MODIFICATION 审中-公开

    公开(公告)号：US20190206680A1

    公开(公告)日：2019-07-04

    申请号：US16228259

    申请日：2018-12-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Han LAI ,  Chien-Wei WANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

    IPC: H01L21/033 ,  H01L21/02 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  G03F7/16

    Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
    8.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 有权

    公开(公告)号：US20210397089A1

    公开(公告)日：2021-12-23

    申请号：US17147424

    申请日：2021-01-12

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Li-Po YANG ,  Wei-Han LAI ,  Ching-Yu CHANG

    IPC: G03F7/038 ,  G03F7/20 ,  G03F7/004 ,  G03F7/36 ,  G03F7/38 ,  G03F7/16 ,  G03F7/039 ,  C08F212/14 ,  C08F220/38

    Abstract: Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: A1, A2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A3 is C6-C14 aromatic, wherein A3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; Rf is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1.

    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210311388A1

    公开(公告)日：2021-10-07

    申请号：US17169206

    申请日：2021-02-05

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Wei-Han LAI ,  Li-Po YANG ,  Shang-Wern CHANG ,  Ching-Yu CHANG ,  Tzu-Yang LIN ,  Chin-Hsiang LIN

    IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

    Abstract: Manufacturing semiconductor device includes forming photoresist layer. Photoresist layer is selectively exposed to actinic radiation and developed to form pattern. Photoresist composition includes: iodine-containing sensitizer, photoactive compound, polymer. Iodine-containing sensitizer includes ammonium, phosphonium, or heterocyclic ammonium iodides, where X1, X2, X3, and X4 are independently direct bond, C6-C30 iodo-aryl group, C1-C30 iodo-alkyl group, C3-C30 iodo-cycloalkyl group, C1-C30 iodo-hydroxylalkyl group, C2-C30 iodo-alkoxy group, C3-C30 iodo-alkoxyl alkyl group, C1-C30 iodo-acetyl group, C2-C30 iodo-acetylalkyl group, C1-C30 iodo-carboxyl group, C2-C30 iodo-alky carboxyl group, and C4-C30 iodo-cycloalkyl carboxyl group; C3-C30 saturated or unsaturated iodo-hydrocarbon ring, or C3-C30 iodo-heterocyclic group; A1, A2, A3, A4 are independently acid labile group selected from C6-C15 iodo-aryl group, C4-C15 iodo-alkyl group, C4-C15 iodo-cycloalkyl group, C4-C15 iodo-hydroxylalkyl group, C4-C15 iodo-alkoxy group, and C4-C15 iodo-alkoxyl alkyl group.

    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    10.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210271164A1

    公开(公告)日：2021-09-02

    申请号：US17168145

    申请日：2021-02-04

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yen-Hao CHEN ,  Wei-Han LAI ,  Ching-Yu CHANG

    IPC: G03F7/039 ,  G03F7/40 ,  G03F7/038 ,  C08J3/24 ,  H01L21/027

    Abstract: Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0≤x/(x+y+z)≤1, 0≤y/(x+y+z)≤1, and 0≤z/(x+y+z)≤1, x, y, and z all not 0 for same polymer. Crosslinker is monomer, oligomer, polymer including structures —B1-OH, —B2-ORa, —B3-NH2 —B4-NR2, B1, B2, B3, B4, and D each independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic group, chain, ring, 3-D structure; R2 and Ra are C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl.

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