公开(公告)号：US09691766B1

公开(公告)日：2017-06-27

申请号：US15088117

申请日：2016-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jia-Ming Lin ,  Chun Che Lin ,  Shiu-Ko JangJian ,  Wei Ken Lin ,  Kuang Yao Lo

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803

Abstract: A fin field effect transistor (FinFET) including a substrate, a plurality of insulators, and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches and include doped regions distributed therein. The gate stack partially covers the at least one semiconductor fin and the insulators. A method for fabricating the aforesaid FinFET is also discussed.