公开(公告)号：US11545619B2

公开(公告)日：2023-01-03

申请号：US16934341

申请日：2020-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Hsiang Wang ,  Han-Ting Lin ,  Yu-Feng Yin ,  Sin-Yi Yang ,  Chen-Jung Wang ,  Yin-Hao Wu ,  Kun-Yi Li ,  Meng-Chieh Wen ,  Lin-Ting Lin ,  Jiann-Horng Lin ,  An-Shen Chang ,  Huan-Just Lin

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.