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    Semiconductor device and manufacturing method thereof
    2.
    发明授权
    Semiconductor device and manufacturing method thereof 审中-公开

    公开(公告)号：US10672870B2

    公开(公告)日：2020-06-02

    申请号：US16036302

    申请日：2018-07-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Lung Chen ,  Kang-Min Kuo ,  Long-Jie Hong

    IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/36 ,  H01L21/033

    Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

    Source/drain structure for semiconductor device
    3.
    发明授权
    Source/drain structure for semiconductor device 有权

    公开(公告)号：US12040384B2

    公开(公告)日：2024-07-16

    申请号：US17459469

    申请日：2021-08-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lung Chen

    IPC: H01L29/66 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/78

    CPC classification number: H01L29/66795 ,  H01L21/02293 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/7851

    Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a recess structure in a substrate and forming a first semiconductor layer over the recess structure. The process of forming the first semiconductor layer can include doping first and second portions of the first semiconductor layer with a first n-type dopant having first and second doping concentrations, respectively. The second doping concentration can be greater than the first doping concentration. The method can further include forming a second semiconductor layer over the second portion of the first semiconductor layer. The process of forming the second semiconductor layer can include doping the second semiconductor layer with a second n-type dopant.

    Semiconductor device and manufacturing method thereof
    5.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US11121217B2

    公开(公告)日：2021-09-14

    申请号：US16889511

    申请日：2020-06-01

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Lung Chen ,  Kang-Min Kuo ,  Long-Jie Hong

    IPC: H01L29/08 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/36 ,  H01L21/033

    Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

    Structure and formation method of semiconductor device structure with a dummy fin structure
    6.
    发明授权
    Structure and formation method of semiconductor device structure with a dummy fin structure 有权

    公开(公告)号：US10727321B2

    公开(公告)日：2020-07-28

    申请号：US16668787

    申请日：2019-10-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lung Chen ,  Kang-Min Kuo ,  Wen-Hsin Chan

    IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8234

    Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure over a semiconductor substrate, and forming a mask layer covering the dummy fin structure. The method further includes irradiating the mask layer, so that the mask layer is divided into an unirradiated portion and an irradiated portion, and the irradiated portion is over the dummy fin structure. The method also includes removing a top portion of the irradiated portion and a top portion of the dummy fin structure by a first etching operation, such that the dummy fin structure has a convex top surface after the first etching operation. The method includes removing a middle portion of the dummy fin structure by a second etching operation, such that the dummy fin structure has a concave top surface after the second etching operation.

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