公开(公告)号：US20200174382A1

公开(公告)日：2020-06-04

申请号：US16697138

申请日：2019-11-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Ming CHANG ,  Chiu-Hsiang CHEN ,  Ru-Gun LIU ,  Minfeng CHEN

IPC: G03F7/20 ,  G03F1/64

Abstract: A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.

公开(公告)号：US20200312835A1

公开(公告)日：2020-10-01

申请号：US16901232

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Minfeng CHEN ,  Shuo-Yen CHOU

IPC: H01L27/02 ,  G03F7/20 ,  G03F1/36 ,  G03F1/00 ,  G03F1/54

Abstract: A method includes providing a photomask having a patterned absorption layer over a substrate. The photomask is irradiated with a beam having a mixture of transverse electronic (TE) waves and transverse magnetic (TM) waves. The irradiating includes generating surface plasmonic polaritons (SPP) on a sidewall of the patterned absorption layer. The SPP is used to suppress the TM waves while reflecting the TE waves. A target substrate is exposed to TE waves.

公开(公告)号：US20200041892A1

公开(公告)日：2020-02-06

申请号：US16520210

申请日：2019-07-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Minfeng CHEN ,  Shuo-Yen CHOU

IPC: G03F1/24

Abstract: An extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.065 to 0.085, and a thickness ranging from 33.5 nm to 43.5 nm. Another extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.87 to 1.02, an extinction coefficient ranging from 0.085 to 0.105, and a thickness ranging from 25.5 nm to 35.5 nm. Another extreme ultraviolet mask includes an absorber having an index of refraction ranging from 0.895 to 0.950, an extinction coefficient ranging from 0.0600 to 0.0610, and a thickness ranging from 30 nm to 39 nm or 50 nm to 55 nm.

公开(公告)号：US20200041915A1

公开(公告)日：2020-02-06

申请号：US16525510

申请日：2019-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

IPC: G03F7/20

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

公开(公告)号：US20210096475A1

公开(公告)日：2021-04-01

申请号：US17121542

申请日：2020-12-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

IPC: G03F7/20

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

公开(公告)号：US20190163051A1

公开(公告)日：2019-05-30

申请号：US16045816

申请日：2018-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Ming CHANG ,  Minfeng CHEN ,  Min-An YANG ,  Shao-Chi WEI

IPC: G03F1/58 ,  H01L21/027 ,  G03F7/20 ,  G03F1/24

Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The method includes forming a mask layer over the light blocking layer. The mask layer covers a first portion of the light blocking layer, and the first portion is over a second portion of the transparent substrate. The method includes removing the light blocking layer, which is not covered by the mask layer. The method includes removing the mask layer. The first portion of the light blocking layer is removed during removing the mask layer. The method includes removing the second portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a first light blocking structure in the first recess.