公开(公告)号：US20220356567A1

公开(公告)日：2022-11-10

申请号：US17869594

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fa Wu ,  Wen-Lung Ho ,  Huai-Tei Yang

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/455

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

公开(公告)号：US20210032750A1

公开(公告)日：2021-02-04

申请号：US16787043

申请日：2020-02-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fa Wu ,  Wen-Lung Ho ,  Jheng-Long Chen

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/40 ,  C23C16/04

Abstract: Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.

公开(公告)号：US20220356573A1

公开(公告)日：2022-11-10

申请号：US17813876

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Ting Ko ,  Wen-Ju Chen ,  Wan-Chen Hsieh ,  Ming-Fa Wu ,  Tai-Chun Huang ,  Yung-Cheng Lu ,  Chi On Chui

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/52

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.