公开(公告)号：US20210265489A1

公开(公告)日：2021-08-26

申请号：US16906546

申请日：2020-06-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Chi On Chui

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01L21/28 ,  H01L21/764

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

公开(公告)号：US20230335406A1

公开(公告)日：2023-10-19

申请号：US18341410

申请日：2023-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Wan-Chen Hsieh ,  Chun-Ming Lung ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/308 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L21/3085 ,  H01L21/823871 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/02603 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/31111 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02356 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66636 ,  H01L29/66742 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823864 ,  H01L27/092

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

公开(公告)号：US20220020865A1

公开(公告)日：2022-01-20

申请号：US17198133

申请日：2021-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Ya-Lan Chang ,  Ting-Gang Chen ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

公开(公告)号：US20220356573A1

公开(公告)日：2022-11-10

申请号：US17813876

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Ting Ko ,  Wen-Ju Chen ,  Wan-Chen Hsieh ,  Ming-Fa Wu ,  Tai-Chun Huang ,  Yung-Cheng Lu ,  Chi On Chui

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/52

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

公开(公告)号：US11145746B2

公开(公告)日：2021-10-12

申请号：US16906546

申请日：2020-06-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Chi On Chui

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/764 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

公开(公告)号：US20240395907A1

公开(公告)日：2024-11-28

申请号：US18790476

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Ya-Lan Chang ,  Ting-Gang Chen ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/033 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

公开(公告)号：US11728173B2

公开(公告)日：2023-08-15

申请号：US17038499

申请日：2020-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Wan-Chen Hsieh ,  Chun-Ming Lung ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/308 ,  H01L21/8238 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L21/3085 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823864 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

公开(公告)号：US20220102152A1

公开(公告)日：2022-03-31

申请号：US17038499

申请日：2020-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Wan-Chen Hsieh ,  Chun-Ming Lung ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/308 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/66 ,  H01L21/8238

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

公开(公告)号：US11855185B2

公开(公告)日：2023-12-26

申请号：US17198133

申请日：2021-03-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Ya-Lan Chang ,  Ting-Gang Chen ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78 ,  H01L21/02 ,  H01L21/033

CPC classification number: H01L29/66795 ,  H01L21/02178 ,  H01L21/0332 ,  H01L21/823431 ,  H01L29/0669 ,  H01L29/66636 ,  H01L29/785

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

公开(公告)号：US20230395702A1

公开(公告)日：2023-12-07

申请号：US18364352

申请日：2023-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Ju Chen ,  Chung-Ting Ko ,  Ya-Lan Chang ,  Ting-Gang Chen ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/78 ,  H01L21/02 ,  H01L21/033

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L29/0669 ,  H01L29/785 ,  H01L21/02178 ,  H01L21/0332 ,  H01L29/66636

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.