公开(公告)号：US20210032750A1

公开(公告)日：2021-02-04

申请号：US16787043

申请日：2020-02-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fa Wu ,  Wen-Lung Ho ,  Jheng-Long Chen

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/40 ,  C23C16/04

Abstract: Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.

公开(公告)号：US10155252B2

公开(公告)日：2018-12-18

申请号：US14700533

申请日：2015-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Chun-Yu Lee ,  Sheng-Hung Lo ,  Wen-Lung Ho ,  Wen-Sung Tseng

IPC: B08B3/02 ,  H01L21/67

Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer carrier, and a cup surrounding the wafer carrier. The semiconductor apparatus also includes a bottom washing device located between the wafer carrier and the cup, and configured to spray washing liquid onto the cup. Therefore, the cup can be washed by the bottom washing device.

公开(公告)号：US20220356567A1

公开(公告)日：2022-11-10

申请号：US17869594

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fa Wu ,  Wen-Lung Ho ,  Huai-Tei Yang

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/455

Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

公开(公告)号：US09425084B2

公开(公告)日：2016-08-23

申请号：US14056438

申请日：2013-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Shyang Tsai ,  Wen-Han Tan ,  Wen-Lung Ho

IPC: H01L23/12 ,  H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L21/311 ,  H01L21/683 ,  H01L23/29

CPC classification number: H01L21/768 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/31116 ,  H01L21/6831 ,  H01L23/291 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.

Abstract translation: 提供了形成半导体器件结构的机构的实施例。 提供半导体器件结构。 半导体器件结构包括具有正面和背面的衬底。 半导体器件结构还包括形成在衬底的前侧上的器件和形成在器件上的互连结构。 半导体器件结构还包括形成在衬底的背面上的保护层，并且保护层的厚度大约在10μA左右。