公开(公告)号：US20190033252A1

公开(公告)日：2019-01-31

申请号：US15661969

申请日：2017-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Yi-Hsien CHANG ,  Chin-Hua WEN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Tung-Tsun CHEN ,  Yu-Jie HUANG ,  Ching-Hui LIN ,  Sean CHENG ,  Hector CHANG

IPC: G01N27/414 ,  H01L41/08 ,  B01F13/00 ,  C12Q1/68 ,  G01N33/543 ,  B01L3/00

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

公开(公告)号：US20210116413A1

公开(公告)日：2021-04-22

申请号：US17135498

申请日：2020-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Yi-Hsien CHANG ,  Chin-Hua WEN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Tung-Tsun CHEN ,  Yu-Jie HUANG ,  Ching-Hui LIN ,  Sean CHENG ,  Hector CHANG

IPC: G01N27/414 ,  H01L41/09 ,  B01L3/00 ,  B01F11/02 ,  B01F13/00 ,  G01N33/543 ,  H01L41/08

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.