METHOD FOR OPERATING INTEGRATED CIRCUIT WITH BIOFETS

    公开(公告)号:US20250130198A1

    公开(公告)日:2025-04-24

    申请号:US19007330

    申请日:2024-12-31

    Abstract: A method includes following steps. A beating pulse of a cardiac cell is monitored by using a biologically sensitive field-effect transistor (BioFET) disposed within a semiconductor substrate. A temperature around the cardiac cell is detected by using a temperature-sensing diode disposed within the semiconductor substrate. In response to the detected temperature falling below a predetermined threshold, the cardiac cell is heated by using a heater disposed within the semiconductor substrate. The cardiac cell is placed within a fluid containment region above the BioFET, and the temperature-sensing diode occupies a larger area within the fluid containment region than the heater.

    INTEGRATED CIRCUIT WITH BIOFETS
    2.
    发明公开

    公开(公告)号:US20240102959A1

    公开(公告)日:2024-03-28

    申请号:US18525583

    申请日:2023-11-30

    CPC classification number: G01N27/4148 G01N27/4145 G01N33/56966 H01L21/76251

    Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

    INTEGRATED CIRCUIT WITH BIOFETS
    4.
    发明申请

    公开(公告)号:US20220381729A1

    公开(公告)日:2022-12-01

    申请号:US17884382

    申请日:2022-08-09

    Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

    MEMS HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20170248536A1

    公开(公告)日:2017-08-31

    申请号:US15053906

    申请日:2016-02-25

    CPC classification number: G01N27/223 G01N27/226

    Abstract: A micro-electro mechanical system (MEMS) humidity sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which the second substrate includes a conductive layer facing the sensing structure, and a first space between the first substrate and the sensing structure is communicated with or isolated from outside, and a second space between the conductive layer and the sensing structure is communicated with an atmosphere, and the sensing structure, the second space and the conductive layer constitute a capacitor configured to measure permittivity of the atmosphere, and humidity of the atmosphere is derived from the permittivity of the atmosphere, pressure of the atmosphere and temperature.

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