公开(公告)号：US20230288369A1

公开(公告)日：2023-09-14

申请号：US18132500

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Fu-Chun HUANG

IPC: G01N27/414 ,  G01N27/30 ,  B01L3/00

CPC classification number: G01N27/4145 ,  B01L3/502715 ,  G01N27/302 ,  G01N27/4148

Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.

公开(公告)号：US20210116413A1

公开(公告)日：2021-04-22

申请号：US17135498

申请日：2020-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Yi-Hsien CHANG ,  Chin-Hua WEN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Tung-Tsun CHEN ,  Yu-Jie HUANG ,  Ching-Hui LIN ,  Sean CHENG ,  Hector CHANG

IPC: G01N27/414 ,  H01L41/09 ,  B01L3/00 ,  B01F11/02 ,  B01F13/00 ,  G01N33/543 ,  H01L41/08

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

公开(公告)号：US20210117636A1

公开(公告)日：2021-04-22

申请号：US16656882

申请日：2019-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Fu-Chun HUANG

IPC: G06K9/00 ,  G01N27/414 ,  H01L41/113

Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.

公开(公告)号：US20180141800A1

公开(公告)日：2018-05-24

申请号：US15861469

申请日：2018-01-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Ren CHENG ,  Richard YEN ,  Yi-Hsien CHANG ,  Wei-Cheng SHEN

IPC: B81B3/00 ,  B81C3/00

Abstract: A method includes the following operations: forming a piezoelectric substrate including a piezoelectric structure and a conductive contact structure, in which the piezoelectric structure has a conductive layer and a piezoelectric layer in contact with the conductive layer, and the conductive contact structure is electrically connected to the piezoelectric structure and protrudes beyond a principal surface of the piezoelectric substrate; forming a semiconductor substrate having a conductive receiving feature and a semiconductor device electrically connected thereto; aligning the conductive contact structure of the piezoelectric substrate with the conductive receiving feature of the semiconductor substrate; and bonding the piezoelectric substrate with the semiconductor substrate such that the conductive contact structure is in contact with the conductive receiving feature.

公开(公告)号：US20170315085A1

公开(公告)日：2017-11-02

申请号：US15649963

申请日：2017-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao LIU ,  Chun-Ren CHENG ,  Ching-Ray CHEN ,  Yi-Hsien CHANG ,  Fei-Lung LAI ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L21/311 ,  H01L29/66

CPC classification number: G01N27/4145 ,  G01N27/4148 ,  H01L21/31105 ,  H01L27/088 ,  H01L29/66477

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US20160207756A1

公开(公告)日：2016-07-21

申请号：US14599218

申请日：2015-01-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Hsien CHANG ,  Tzu-Heng WU ,  Chun-Ren CHENG ,  Shih-Wei LIN ,  Jung-Kuo TU

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B2207/015 ,  B81C2201/019 ,  B81C2201/112 ,  B81C2203/0785

Abstract: A substrate structure for a micro electro mechanical system (MEMS) device, a semiconductor structure and a method for fabricating the same are provided. In various embodiments, the substrate structure for the MEMS device includes a substrate, the MEMS device, and an anti-stiction layer. The MEMS device is over the substrate. The anti-stiction layer is on a surface of the MEMS device, and includes amorphous carbon, polytetrafluoroethene, hafnium oxide, tantalum oxide, zirconium oxide, or a combination thereof.

Abstract translation: 提供了一种用于微机电系统（MEMS）器件的衬底结构，半导体结构及其制造方法。 在各种实施例中，用于MEMS器件的衬底结构包括衬底，MEMS器件和抗静电层。 MEMS器件在衬底上。 抗静电层位于MEMS器件的表面上，并且包括无定形碳，聚四氟乙烯，氧化铪，氧化钽，氧化锆或其组合。

公开(公告)号：US20230081170A1

公开(公告)日：2023-03-16

申请号：US18051107

申请日：2022-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander KALNITSKY ,  Yi-Shao LIU ,  Kai-Chih LIANG ,  Chia-Hua CHU ,  Chun-Ren CHENG ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L51/00 ,  H01L21/84 ,  H01L27/12

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20200150080A1

公开(公告)日：2020-05-14

申请号：US16727738

申请日：2019-12-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander KALNITSKY ,  Yi-Shao LIU ,  Kai-Chih LIANG ,  Chia-Hua CHU ,  Chun-Ren CHENG ,  Chun-Wen CHENG

IPC: G01N27/414 ,  H01L51/00 ,  H01L21/84 ,  H01L27/12

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20190256347A1

公开(公告)日：2019-08-22

申请号：US16398013

申请日：2019-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Hsien CHANG ,  Tzu-Heng WU ,  Chun-Ren CHENG ,  Shih-Wei LIN ,  Jung-Kuo TU

IPC: B81B3/00

Abstract: A method includes forming a recess in a first substrate, bonding a micro-electro-mechanical systems (MEMS) substrate to the first substrate after forming the recess in the first substrate, forming an anti-stiction layer over the micro-electro-mechanical systems (MEMS) substrate, pattering the anti-stiction layer, etching the MEMS substrate to form a MEMS device, and bonding the MEMS device and the first substrate to a second substrate. The patterned anti-stiction layer is between the MEMS device and the second substrate.

公开(公告)号：US20160264399A1

公开(公告)日：2016-09-15

申请号：US14657429

申请日：2015-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Ren CHENG ,  Richard YEN ,  Yi-Hsien CHANG ,  Wei-Cheng SHEN

IPC: B81B3/00 ,  B81C3/00

CPC classification number: B81B3/0021 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C3/001 ,  H04R1/06 ,  H04R17/00 ,  H04R17/02 ,  H04R2201/003

Abstract: A MEMS transducer includes a first substrate and a second substrate facing the first substrate. The first substrate includes a piezoelectric diaphragm and a conductive contact structure. The conductive contact structure is electrically connected to the piezoelectric diaphragm, and protrudes beyond a principal surface of the first substrate. The second substrate includes a conductive receiving feature and an active device. The conductive receiving feature is aligned with and further bonded to the conductive contact structure. The active device is electrically connected to the piezoelectric diaphragm through the conductive receiving feature and the conductive contact structure.

Abstract translation: MEMS换能器包括面向第一基板的第一基板和第二基板。 第一基板包括压电隔膜和导电接触结构。 导电接触结构电连接到压电振膜，并突出超过第一基板的主表面。 第二基板包括导电接收特征和有源器件。 导电接收特征与导电接触结构对准并进一步结合。 有源器件通过导电接收特征和导电接触结构电连接到压电振动膜。